The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 ± 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

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Transition metal oxides exhibit a range of correlated phenomena with applications to novel electronic devices that possess remarkable functionalities. This article reviews recent progress in elucidating both mechanisms that govern correlated behavior in transition metal oxides and advancements in device fabrication that have enabled strong correlations to be controlled through applied electric fields. Advancements in the growth of transition-metal-oxide films and artificial heterostructures have enabled superconductivity, magnetism, and metal-insulator transitions to be controlled in cuprates, manganites, and vanadates by using the electric field effect. In addition, interfaces between transition metal oxides have recently emerged as a setting in which strong correlations can be manipulated in two dimensions to realize unusual quantum-ordered phases. Finally, key relationships between structure and transport in ultrathin films of transition metal oxides have been elucidated. Coupling the structural degrees of freedom in oxides to applied electric fields thus opens new pathways to control correlated behavior in devices.

Metallic electronic transport in nickelate heterostructures can be induced and confined to two dimensions (2D) by controlling the structural parameters of the nickel-oxygen planes.