An alternative doping process to ion implantation for the production of very shallow p'-n junctions has been investigated. The n-type silicon wafers covered with a boron-doped silicon oxide were submitted to thermal cycles with incoherent light radiation to temperatures between 900 and 1250 "C for times ranging from 20 to 120 S, in order to promote boron in-diffusion. The samples were characterised by sheet resistance measurements combined with sequential layer removal to obtain the carrier concentration-depth profiles. The results show the formation of a boron-rich surface layer above the normal boron solubility levels and a linear dependence of the sheet conductance on diffusion time, which suggests a chemical reaction at the silicon surface is the controlling factor for the boron in-diffusion. Moreover it was demonstrated that defect-free p*-n junctions with a junction depth as shallow as 50 nm are readily obtained.
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