We investigate by photoacoustic spectroscopy the optical band-gap energy of mercuric iodide, α-HgI2, grown by sublimation in a sealed ampoule. Due to its importance as a detector material operating at ambient temperature, the physical properties of α-HgI2 have been recently studied. We found, by two different methods, the band-gap energies EG=2.32 and 2.39 eV, respectively. These results are in good agreement with recent measurements based on reflection and absorption spectra.
The optical band-gap energy of the semiconductors GaAs, CdSe, Cds, ZnSe and Si doped with P at a concentration of 4 x 1 0~~c m-~, are obtained by photoacoustic spectroscopy technique. Excellent agreements are found with the values recorded in the literature.
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