The electronic properties and the optical absorption of lead iodide (PbI 2 ) have been investigated experimentally by means of optical absorption and spectroscopic ellipsometry, and theoretically by a full-potential linear muffin-tin-orbital method. PbI 2 has been recognized as a very promising detector material with a large technological applicability. Its band-gap energy as a function of temperature has also been measured by optical absorption. The temperature dependence has been fitted by two different relations, and a discussion of these fittings is given.
The optical bandgap energy of lead iodide PbI2, grown by Bridgman’s method, is obtained by photoacoustic spectroscopy. Due to its potential applications, as a room temperature, semiconductor material detector, which may be used as a photocell, or as a x- and γ-ray radiation detector, the physical properties of PbI2 have attracted much attention. We computed, by different methods the bandgap energy. We found the energy in a range 2.301±0.038⩽〈Eg〉⩽2.359±0.037 eV.
The thermal diffusivity and thermal conductivity have been determined for lead iodide PbI2, at room temperature, using the photoacoustic spectroscopy. The result shows a thermal diffusivity αs=(25.0±0.4)×10−3 cm2/s, a value very close to other semiconductors of current technological importance. The electrical conductivity is also measured and discussed.
We investigate by photoacoustic spectroscopy the optical band-gap energy of mercuric iodide, α-HgI2, grown by sublimation in a sealed ampoule. Due to its importance as a detector material operating at ambient temperature, the physical properties of α-HgI2 have been recently studied. We found, by two different methods, the band-gap energies EG=2.32 and 2.39 eV, respectively. These results are in good agreement with recent measurements based on reflection and absorption spectra.
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