Chemical solution deposition (CSD) has recently emerged as a very competitive technique for obtaining epitaxial films of high quality with controlled nanostructure. In particular, the all-CSD approach is considered to be one of the most promising approaches for cost-effective production of second-generation superconducting wires. The trifluoroacetate (TFA) route is a very versatile route for achieving epitaxial YBa 2 Cu 3 O 7 (YBCO) layers with high critical currents. In this work, recent advances towards improvement of the performance of several conductor architectures based on the YBCO TFA process will be presented. We show that new improved anhydrous TFA precursors allow a significant shortening of the pyrolysis time (∼1.5 h), and we have increased the total film thickness in a single deposition using polymeric additives. On the other hand, further understanding of the YBCO nucleation and growth process has allowed us to obtain a controlled microstructure and high critical currents (J c ≈ 4-5 MA cm −2 and I c ≈ 300 A cm −1 width at 77 K). The growth conditions (CSD) and post-processing conditions (sputtering and CSD) for the underlying oxide cap and buffer layers (CeO 2 , BaZrO 3 , SrTiO 3 , La 2 Zr 2 O 7 , (La, Sr)MnO 3 ) and of self-organized nanostructures (CeO 2 , BaZrO 3 ) deposited by CSD have been investigated to obtain high-quality interfaces in multilayered systems. Different single-crystal or metallic substrates (YSZ-IBAD (yttrium stabilized zirconia-ion beam assisted deposition) and Ni-RABiT (rolling assisted biaxial texturing)) have been investigated and long (≈10 m) CSD biaxially textured buffers (CeO 2 , La 2 Zr 2 O 7 ) have been grown on Ni-RABiT substrates using a reel-to-reel system. High-performance TFA-YBCO-coated conductors have been obtained on vacuum-based buffer layers (I c ≈ 140 A cm −1 width) and on CSD buffer layers grown on IBAD YSZ-SS (stainless steel) substrates. Finally, we report on recent analysis of the magnetic granularity and vortex pinning properties of TFA-YBCO conductors.

We present a study of the structural and quantum conductance properties of atomic-size copper nanowires generated by mechanical stretching. The atomistic evolution was derived from time-resolved electron microscopy observations and molecular dynamics simulations. We have analyzed the quantum transport behavior by means of conductance measurements and theoretical calculations. The results suggest the formation of an unusual and highly stable pentagonal Cu nanowire with a diameter of approximately 0.45 nm and approximately 4.5 conductance quanta.

The influence of three processing parameters, temperature, gas flow rate and water pressure, on the YBa 2 Cu 3 O 7 film growth on LaAlO 3 single-crystal substrates from trifluoroacetate precursors has been investigated and the optimal film processing conditions to achieve high critical currents have been determined. We have found that the growth conditions maximizing the critical current density are those where the nucleation of a-axis oriented grains is minimized, as determined by µ-Raman spectroscopy. Under these conditions the normal state resistivity is very near to that of single crystals because a vanishingly small film porosity is achieved. Transmission electron microscopy analysis of films quenched from the growth temperature gives some hints for understanding the mechanism linking the film porosity with the concentration of a-axis grains. A cross-linked influence of different processing parameters, such as temperature and water pressure, or water pressure and gas flow, has been demonstrated. The optimal growth temperatures are 790-830 • C, but at these growth temperatures, the critical current density is still dependent on the gas flow rate and water pressure. The optimal processing ranges are a compromise between two different competing phenomena influencing the quality of the films: inhomogeneous film formation due to HF gas stagnancy at small nominal growth rates (low gas flow rate or water pressure) and perturbed crystallinity at high gas flow rates or water pressures.

The Persistent Photoconductivity (PPC) effect was studied in individual tin oxide (SnO 2 ) nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low temperature Photoluminescence measurements were carried out to study the optical transitions and to determine of the acceptor/donors levels and their best representation inside the band gap. Under ultraviolet (UV) illumination and at temperatures in the range of 200 to 400K we observed a fast and strong enhancement of the photoconductivity, and the maximum value of the photocurrent induced increases as the temperature or the oxygen concentration decreases. By turning off the UV illumination the induced photocurrent decays with lifetimes up to several hours. The photoconductivity and the PPC results were explained by adsorption and desorption of molecular oxygen at the surface of the SnO 2 nanobelts. Based on the temperature dependence of the PPC decay an activation energy of 230 meV was found, which corresponds to the energy necessary for thermal ionization of free holes from acceptor levels to the valence band, in agreement with the photoluminescence results presented. The molecular-oxygen recombination with holes is the origin of the PPC effect in metal oxide semiconductors, so that, the PPC effect is not related to the oxygen vacancies, as commonly presented in the literature.

In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.