Effects of a computerized professional development (PD) program for a concept teaching routine were investigated in two studies. For each, teachers were randomly assigned to either a virtual workshop group that used a multimedia software program for PD or an actual workshop group that participated in a live PD session. In Study 1, the teachers’ knowledge about the routine and planning for the routine significantly improved after completing either workshop; no significant differences were found between the groups. Both teacher groups were satisfied with the PD. In Study 2, the teachers’ performance of the routine in their classrooms improved, as did student performance on tests of concept knowledge. Students were satisfied with the instruction provided by both groups of teachers. No differences were found between the posttest scores earned by the teacher groups or by students of the teachers. Implications regarding computerized PD for teachers are discussed.
There is a clear and widespread need for comprehensive and practical education in digital image technology for radiologic technologists, especially those engaged in pediatric radiography. The creation of better educational materials and training programs, and the continuation of educational opportunities will require a broad commitment from equipment manufacturers and vendors, educational institutions, pediatric radiology specialty organizations, and individual imaging specialists.
Composition-controlled metal-organic chemical vapor deposition of La 2 CuO 4 thin films using ultraviolet absorption sensors to provide incoming precursor flux control is reported. These sensors provide a more flexible and sensitive alternative to ultrasonic sensors. The films were c-axis oriented and semiconducting as grown on LaAlO 3 substrates. Chemical oxidization at room temperature in a sodium hypobromite solution resulted in an expansion of the c-axis lattice parameter and the conversion of the semiconducting film into a superconductor with a zero-resistance transition temperature of 32 K.
Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch rate can be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range than that accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has been characterized.
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