Data are presented (77°K) showing that laser transitions to either the valence band edge or to the acceptor, or both, are possible in a specific impurity concentration range (2 × 1017−1018/cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a low-loss crystal structure that is pumped uniformly.

Precise cell dimensions of GaAs, GaAs0.59P0.41, GaAs0.5P0.5, and GaP have been determined from x-ray powder diffraction patterns from −62° to 200°C. Within the temperature range investigated, the constant thermal coefficients of expansion are, respectively, 6.86×10−6, 7.81×10−6, 5.91×10−6, and 5.81×10−6°C−1. The cell dimension of pure GaP (impurity less than 3.0 ppm) is 5.4495±0.0001 Å at 24°C.

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