Fundamental optical properties of strained wurtzite GaN quantum-well laser are calculated and evaluated near the threshold condition. The formalism is based on a self-consistent methodology that couples an envelope-function Hamiltonian for band structures with photon-carrier rate equations. Details of energy band structure, optical gain, and modulation response are studied comprehensively under the effects of straininduced piezoelectric fields, bandgap renormalization, and the carrier capture processes. Comparisons between different approximations show that self-consistency is essential to accurately simulate pseudomorphically strained wurtzite GaN quantum-well lasers.
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