The steady-state occupation of multiple chargeable deep trap levels of a depletion-layer is calculated. Using this result, the capacitance of reverse-biased p+-n step junctions with traps is obtained by integration of the Poisson equation. It is shown that measurements of the ac and do capacitance of the p n junction with traps and of the capacitance of an equivalent junction without traps give some information about the capture cross-section ratios for electrons and holes of the trap levels.Der stationiire Besetzungsznstand von mehrfach besetzbaren tiefen Lokaltermen in einer Verarmungszone wird berechnet. Von diesen Ergebnissen ausgehend wird durch Integration der Poissongleichung ein Ausdruck fur die Kapazitiit sperrgespannter abrupter p+-n-ubergiinge erhalten. Es wird gezeigt, daO Kapazitiitsmessungen bei hohen und tiefen Frequenzen an p-n-ubergiingen mit tiefen Lokalniveaus und Kapazitiitsmessungen an entsprechenden Ubergangen ohne tiefe Niveaus Aussagen uber das Verhiiltnis der Einfangquerschnitte dieser Niveaus fur Elektronen und Locher liefern.Sah and Reddi [l] have generalized the relationship for the voltage dependence of capacitance for the case of a step p+-n junction containing deep traps. Specially, they have studied gold-doped silicon p+-n junctions, using a model that separates the space-charge layer in three different regions : first in the depletion region given by ytl < y < yt where the gold centres are all neutral, second in a region given by y > yt where the gold centres are negatively charged, and, finally, in a region given by 0 < y < ytl where the gold centres are positively charged. Neutrality of the gold centres in the depletion region is assumed without any further argument. This latter assumption seems t o be neither evident nor of general validity. It is the purpose of this work to give a somewhat more generalized treatment of the voltage dependence of the capacitance in step p+-n junctions containing deep traps.The occupation of a multiple chargeable deep trap is described by the following equations [ 2 ] :
The results of an experimental study of the optical and photoelectrical properties of Eu-containing lead chalcogenides and superlattices are presented, From both sets of experiments band offset data for the lead chalcogenideeuropium chalcogenide heterojunction are derived. The results are compared with the data obtained from a linear InterDolation of the band structures between those of the binaries.
A model is established, according to which a deformation of the crystal lattice generates a second kind of charge carriers showing the same temperature dependence of mobility but being lower by one order of magnitude. On the basis of this model, the phenomena caused additionally by a lack of crystal perfection, such as the variations of Hall mobility in differently prepared samples and the occurrence of a superlinearity in the j(E)‐characteristic, are explained.
82IEEE TRANXACTIONX ON CIRCUIT THEORY March of Fig. 2(e) is used. Then the only negative resistor required is across the input. If k,, is negative and lcll > lklzl, the network of Fig. 2(e) is used, with the input and output ports reversed and the constants k,, and k,, interchanged. Then the only negative resistor appears across the output. If k,, is positive, the network of Fig. 2(f) is used. Then the only negative resistor appears across the top terminals of the network. Consider a pole on the positive real axis. The form of the pole is the same as that for a pole on the negative real axis. However, k,,, k,, and si are negative. A pole on the positive real axis can be realized by either the network of Fig. 2(e) or that of Fig. 2(f). If II,, is negative, the network of Fig. 2(e) is used. Then the input resistor and one of the other two resistors are negative. If k,, is positive, the network of Fig. 2(f) is used. Then the resistor across the top terminals and one of the other two resistors are negative.An examination of the component networks given shows that, in general, the number of negative resistors required to realize a compact set of admittance functions is equal to the number of poles not on the finite negative real axis plus, at most, three. CONCLUSIONSA general synthesis technique is present.ed which will realize the &R, C short-circuit admittance functions yll, y12 and yz2. The number of negative resistors required in the realization of a compact set of admittance functions is equal to the number of poles of the admittance functions not on the finite negative real axis plus, at most, three.Summary-The synthesis of a subclass of one-port biquadratic RZC functions, determined by the requirement of utilizing the minimum number of reactive elements in a transformerless configuration, is discussed. The network realization technique that is developed has the interesting property of yielding all networks in the desired subclass, in the sense that all possible z parameters of the associated resistive three-port and the range of allowable reactive element values, are determinable.Also indicated are inherent difficulties and present limitations on the extension of the method to immittance functions of order greater than two.
The longitudinal photon drag has been studied for free holes in tellurium using a Q-switched CO, laser. A great effect is expected due to the great interband matrix element for allowed direct hole transitions between the sub-valence bands H, and H,. Due to the low crystal symmetry interesting anisotropy phenomena take place. The measurements have been performed for a set of samples, oriented either parallel or perpendicular to the c-axis. The drag effect connected with sub-band transitions is dominating as predicted by the theory (tensor coefficient ol13connected with the absorption of radiation polarized FW 1 c was found to be -1 x x 10-12cm/V a t 77 K.Der longitudinale photon-drag-Effekt an quasifreien Lochern in Tellur wird mit einem giitegeschalteten C0,-Laser untersucht. Wegen des groBen Interbandmatrixelements fur direkte erlaubte Locherubergange zwischen den Subvalenzbandern H, und H, ist ein groBer Effekt zu erwarten. Wegen der geringen Gittersymmetrie treten interessante Anisotropieeffekte auf. Die Messungen an einem Satz Proben, die entweder parallel oder senkrecht zur c-Achse des Tellurs orientiert waren, zeigen, daS erwartungsgemiS der mit den Subbandiibergangen verknupfte Effekt dominiert (Tensorkoeffizient ollS3 = 5 x 10-l2 cm/V bei T = 77 K). Der mit der Absorption von Strahlung PW c verkniipfte Koeffizient cXdl1 wiirde zu -1 x lo-'* cm/V bei 77 K bestimmt.
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