Graphene nanoribbons (GNRs) are excellent candidates for next-generation electronic materials. Unlike GNRs produced by "top-down" methods such as lithographical patterning of graphene and unzipping of carbon nanotubes that cannot reach structural perfection, the fabrication of structurally well-defined GNRs has been achieved by a "bottom-up" organic synthesis via solution-mediated or surface-assisted cyclodehydrogenation. Specifically, non-planar polyphenylene precursors were first "build up" from small molecules, and then "graphitized" and "planarized" to yield GNRs. However, fabrication of processable and longitudinally well-extended GNRs has remained a major challenge. Here we report a "bottom-up" solution synthesis of long (>200 nm), liquid-phase processable GNRs with well-defined structure and a large optical bandgap of 1.88 eV. Scanning probe microscopy demonstrates self-assembled monolayers of GNRs, and non-contact, time-resolved Terahertz conductivity measurements reveal excellent charge-carrier mobility within individual GNRs. Such structurally well-defined GNRs offer great opportunities for fundamental studies into graphene nanostructures, as well as development of GNR-based nanoelectronics.DOI: 10.1038/NCHEM.1819 http://www.nature.com/nchem/journal/v6/n2/abs/nchem.1819.html 2 Graphene nanoribbons (GNRs), defined as nanometre-wide strips of graphene, are attracting increasing attention as highly promising candidates for next generation semiconductor materials 1,2,3,4 . Quantum confinement effects impart GNRs with semiconducting properties, i.e. with a finite bandgap, which critically depends on the ribbon width and its edge structure 1,3 . Fabrication of GNRs has been primarily carried out by "top-down" approaches such as lithographical patterning of graphene 5,6 and unzipping of carbon nanotubes 7,8 , revealing their semiconducting nature and excellent transport properties 1 . However, these methods are generally limited by low yields and lack of structural precision, leading to GNRs with uncontrolled edge structures.In contrast, a "bottom-up" chemical synthetic approach based on solution-mediated 9,10,11,12,13 or surface-assisted 14 cyclodehydrogenation, namely "graphitization" and "planarization", of tailor-made three-dimensional polyphenylene precursors offers an appealing strategy for making structurally well-defined and homogeneous GNRs. The polyphenylene precursors are built up from small molecules, and thus their structures can be tailored within the capabilities of modern synthetic chemistry 15 . However, GNRs (>30 nm) produced by solution-mediated methods have been precluded from unambiguous structural characterization, i.e. microscopic visualization, due to their limited processability 9,12 . On the other hand, GNRs produced by the surface-assisted protocol have been characterized to be atomically precise using scanning tunnelling microscopy (STM) 14 . Nevertheless, this method can only provide a limited amount of GNR material, which is further bound to a metal surface, impeding wide...

Due to their layered structure, two-dimensional Ruddlesden-Popper perovskites (RPPs), composed of multiple organic/inorganic quantum wells, can in principle be exfoliated down to few and single layers. These molecularly thin layers are expected to present unique properties with respect to the bulk counterpart, due to increased lattice deformations caused by interface strain. Here, we have synthesized centimetre-sized, pure-phase single-crystal RPP perovskites (CH(CH)NH)(CHNH)PbI (n = 1-4) from which single quantum well layers have been exfoliated. We observed a reversible shift in excitonic energies induced by laser annealing on exfoliated layers encapsulated by hexagonal boron nitride. Moreover, a highly efficient photodetector was fabricated using a molecularly thin n = 4 RPP crystal, showing a photogain of 10 and an internal quantum efficiency of ~34%. Our results suggest that, thanks to their dynamic structure, atomically thin perovskites enable an additional degree of control for the bandgap engineering of these materials.

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.

We present a detailed Raman study of defective graphene samples containing specific types of defects. In particular, we compared sp 3 sites, vacancies, and substitutional Boron atoms. We find that the ratio between the D and G peak intensities, I(D)/I(G), does not depend on the geometry of the defect (within the Raman spectrometer resolution). In contrast, in the limit of low defect concentration, the ratio between the D and G peak intensities is higher for vacancies than sp 3 sites. By using the local activation model, we attribute this difference to the term C S,x , representing the Raman cross section of I(x)/I(G) associated with the distortion of the crystal lattice after defect introduction per unit of damaged area, where x = D or D. We observed that C S,D = 0 for all the defects analyzed, while C S,D of vacancies is 2.5 times larger than C S,D of sp 3 sites. This makes I(D)/I(D) strongly sensitive to the nature of the defect. We also show that the exact dependence of I(D)/I(D) on the excitation energy may be affected by the nature of the defect. These results can be used to obtain further insights into the Raman scattering process (in particular for the D peak) in order to improve our understanding and modeling of defects in graphene.

The 2H-to-1T' phase transition in transition metal dichalcogenides (TMDs) has been exploited to phase-engineer TMDs for applications in which the metallicity of the 1T' phase is beneficial. However, phase-engineered 1T'-TMDs are metastable; thus, stabilization of the 1T' phase remains an important challenge to overcome before its properties can be exploited. Herein, we performed a systematic study of the 2H-to-1T' phase evolution by lithiation in ultrahigh vacuum. We discovered that by hydrogenating the intercalated Li to form lithium hydride (LiH), unprecedented long-term (>3 months) air stability of the 1T' phase can be achieved. Most importantly, this passivation method has wide applicability for other alkali metals and TMDs. Density functional theory calculations reveal that LiH is a good electron donor and stabilizes the 1T' phase against 2H conversion, aided by the formation of a greatly enhanced interlayer dipole-dipole interaction. Nonlinear optical studies reveal that air-stable 1T'-TMDs exhibit much stronger optical Kerr nonlinearity and higher optical transparency than the 2H phase, which is promising for nonlinear photonic applications.

Black phosphorus has an orthorhombic layered structure with a layer-dependent direct band gap from monolayer to bulk, making this material an emerging material for photodetection. Inspired by this and the recent excitement over this material, we studied the optoelectronics characteristics of high-quality, few-layer black phosphorus-based photodetectors over a wide spectrum ranging from near-ultraviolet (UV) to near-infrared (NIR). It is demonstrated for the first time that black phosphorus can be configured as an excellent UV photodetector with a specific detectivity ∼3 × 10(13) Jones. More critically, we found that the UV photoresponsivity can be significantly enhanced to ∼9 × 10(4) A W(-1) by applying a source-drain bias (VSD) of 3 V, which is the highest ever measured in any 2D material and 10(7) times higher than the previously reported value for black phosphorus. We attribute such a colossal UV photoresponsivity to the resonant-interband transition between two specially nested valence and conduction bands. These nested bands provide an unusually high density of states for highly efficient UV absorption due to the singularity of their nature.

Structurally defined, long (>100 nm), and low-band-gap (∼1.2 eV) graphene nanoribbons (GNRs) were synthesized through a bottom-up approach, enabling GNRs with a broad absorption spanning into the near-infrared (NIR) region. The chemical identity of GNRs was validated by IR, Raman, solid-state NMR, and UV-vis-NIR absorption spectroscopy. Atomic force microscopy revealed well-ordered self-assembled monolayers of uniform GNRs on a graphite surface upon deposition from the liquid phase. The broad absorption of the low-band-gap GNRs enables their detailed characterization by Raman and time-resolved terahertz photoconductivity spectroscopy with excitation at multiple wavelengths, including the NIR region, which provides further insights into the fundamental physical properties of such graphene nanostructures.

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