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Nowadays, when the problem of environmental protection is quite stringent, the producers are concerned to bring on the market products, which have reduced environmental impact. In their turn, the consumers have become more aware and selective in purchasing products or services. Due to the financial crisis, consumers buy less but they are asking for quality and environmental friendly products. Under these circumstances the producers must find solutions in order to satisfy the consumers' requirements. According to market survey the significant progress has been made in the production of green products so that they reduce the environmental impact, taking into account a part or the whole lifecycle of the product. In free consecutive years gradually the companies are oriented to obtain various certifications for the products and services they offer. One of the most important and successful certification schemes identified by survey is the European eco-label. However, there are a number of other widely accepted and successful labels that are also analyzed in the present study. The survey objective was to identify green products on the Romanian market and to monitor their evolution. The present paper presents the results of three years market research focusing on product categories that include eco-labeled products.

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Ga2S3 single crystals have been obtained by chemical vapor transport (CVT) in iodine vapors. The Ga2S3 compound was synthesized from Ga and S taken in stoichiometric quantities. The compound has been subjected to long term thermal annealing (TA) at the temperatures of 850 and 1070 K for 6 to 60 h in Zn vapors. After TA the natural surface of Ga2S3 single crystals contain a cover layer. The photoluminescence, photoconductivity and electrical conductivity of this layer depend on treatment conditions (temperature and duration). Electrical conductivity of these samples is 3–5 magnitude orders higher than for untreated crystals. The treated single crystals contain both Ga2S3 and ZnS crystallites. Thermal annealing of Ga2S3 crystals in Zn vapors leads to shifting of fundamental absorption edge toward low energies and absorption coefficient increase in the spectral region of 2.4–3.0 eV.

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The GaSxSe1‐x and GaSexTe1‐x single crystals with the composition parameter x in the range of 0 ≤ x ≤ 0.3 and 0.7 ≤ x ≤ 1 respectively have been obtained. The absorption and photoluminescence (PL) measurements have been carried out for two polarizations: E ∥ C and E ⊥ C (E is the electrical field vector of light wave and C is the crystallographic axis normal to the cleaved plane). The anisotropy of optical absorption reveals itself on the low energy wing of the n =1 free exciton band. The anisotropy coefficient increases with the temperature decrease. The edge of the absorption band is determined by direct n =1 excitons for E ⊥ C polarization and by indirect transitions at low absorption coefficient for E ∥ C polarization. The photoluminescence spectra of GaS0.2Se0.8 crystals at 78 K in E ∥ C and E ⊥ C polarizations are identical to those of GaSe. The high energy photoluminescence band is determined by the radiative emission of direct bounded excitons. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)