No abstract

The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells has been investigated.

No abstract

No abstract

Charge carrier transport mechanism in the CdS/CdTe heterojunction with a zinc oxide front contact of a ZnO:Al/i-ZnO/CdS/CdTe/Cu/Ni structure has been investigated in the temperature range of 100-373K. It has been found that at forward biases the charge carrier transport mechanism is determined by tunneling through charge states related to dislocations. An estimation of the concentration of dislocations gives a value of 2.910 2 cm-2. At reverse biases higher than 0.7 V, the charge transport mechanism is determined by tunneling processes. The leakage current component is predominant for reverse voltages lower than 0.4 V.