The maximum direct bandgap energy of Al
x
Ga
y
In1-x-y
P lattice-matched to GaAs is found to be 2.17 eV at x=0.21 and y=0.34. This is the largest value among the III-V compounds with the zinc-blende structure. The phase diagram is calculated of the quaternary system Al–Ga–In–P. It is predicted that the LPE growth of Al
x
Ga
y
In1-x-y
P will encounter serious difficulties resulting from the extremely large segregation coefficient of aluminum. In fact, experiments have shown that aluminum is not incorporated into the crystals grown from the quaternary solutions because of the instant depletion of aluminum at the very early stage of the cooling process.
We succeeded in the phase locked operation of a 5-element GaAIAs diode laser array emitting 0.6W CW. The diodes use nonabsorbing mirrors (NAM's) for the suppression of catastrophic optical damage (COD) and a buried twin ridge substrate (BTRS) structure for the injection current confinement and for the stabilization of a transverse mode.
The longitudinal mode behavior of AlGaAs lasers with n-type cladding layers doped with Se and Si is reported. The longitudinal mode of the lasers with highly Se-doped cladding layer is stabilized, and large hysteresis of mode jump is observed as temperature changes. In the case of highly Si-doped cladding layers, however, the mode hops to the adjacent one and no hysteresis is observed. These phenomena are explained by the difference in thermal activation energy between Se- and Si-related DX centers.
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