A methodology of direct characterization of interface traps in trench sidewall in STI structure is presented for the first time. It is demonstrated that n+/p-well diode in STI structure, which has large perimeter component of junction leakage, shows high D,t(-5X10" cm.' e V 1 near midgap) in trench sidewall. Successful reduction of junction leakage current is achieved by further hydrogen passivation of interface traps. Residual bulk traps are distributed within 25 nm from the surface. However, they would not contribute to junction leakage current because of smaller capture cross section.
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