Articles you may be interested inSynthesis and characterization of SiC:H ultrafine powder generated in an argon-silane-methane lowpressure radio-frequency discharge Indium nitride thin films prepared by radiofrequency reactive sputtering Hydrogenated amorphous germanium-carbon (a-GeC:H) and silicon-carbon (a-SiC:H) films were deposited by reactive magnetron sputtering of Ge and Si targets in a methane argon gas mixture. The effect of rf power on the structural, optical, and electrical properties of the films was investigated. The carbon content in a-SiC:H films is larger than in a-GeC:H for the same deposition condition, and it decreases with increasing rf power. The intensity of the carbon-related bonds, the optical band gap, and the activation energy of dc conductivity of both films decreases with decreasing carbon content. The temperature dependence of dc conductivity of a-SiC:H exhibits activated-type conduction, whereas hopping conduction is predominant in a-GeC:H. Hydrogen concentration and H bonding ratio are examined, indicating that the termination of the dangling bond by hydrogen is more effective in a a-SiC:H films than a-GeC:H films. 0 1995 American Institute of Physics.
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