Structural, optical and electronic properties of amorphous SiC: H alloys prepared by magnetron sputtering of silicon in methane-argon gas mixtures

Saito, Nobuo; Yamada, Takahiro; Yamaguchi, Tomuo; Nakaaki, Isamu; Tanaka, Nobutada

doi:10.1080/01418638508241888

Cited by 45 publications

(7 citation statements)

References 20 publications

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“…The observed trends are identical to those obtained for a-Si,C:H (Saito et al 1985) alloys. It is found from figures 3 and 4 that the room temperature conductivity varies by an order of magnitude as the cooling rate is changed from slow to rapid (quenching), with enhanced conductivity upon quenching the samples.…”

Section: Discussionsupporting

confidence: 87%

Study of thermal equilibration in selenium- and sulphur-doped a-Si:H

Sharma

Baveja

Mehra

2003

International Journal of Electronics

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The present paper reports the thermal equilibration in selenium-and sulphurdoped hydrogenated amorphous silicon thin films deposited by plasma-enhanced chemical vapour deposition. The conductivity of Se-and S-doped a-Si:H is observed to be very sensitive to the rate at which the samples are cooled following the high temperature anneal. Arrhenius plots of conductivity for various doped films revealed thermal equilibration above the equilibration temperature, T E , thus accounting for larger activation energies. The barrier energy is lower for a-Si,Se:H than for a-Si,S:H, due to a higher defect density in S-doped films.

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Section: Discussionsupporting

confidence: 87%

Study of thermal equilibration in selenium- and sulphur-doped a-Si:H

Sharma

Baveja

Mehra

2003

International Journal of Electronics

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“…It increases again for R v above 0.6 in a-Si,S:H or R v above 0.8 in a-Si,Se:H. The E opt dependence on R v has an inverted s-shaped behavior. The same type of variation was also reported by Saito et al [42] in a-Si,C:H, indicating that the compositional dependence of E opt is universal in these types of alloys. A model was developed to explore the nature of this variation [43].…”

Section: Compositional Dependence Of Energy Gap In Amorphous Silicon-supporting

confidence: 70%

“…To verify the possible bias of the data, the authors [43] applied the same model to a-Si,C:H reported by Saito et al [42]. The best fit of their data on a-Si,C:H can be approximated by the relation ( ) The above relation may be compared with the ratio of the atomic weights of carbon and sulphur atomic weight of carbon 12.010 0.3745 atomic weight of sulphur 32.066 = = (10)…”

Section: Compositional Dependence Of Energy Gap In Amorphous Silicon-mentioning

confidence: 99%

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Dallal¹

2015

Superalloys

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Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH 4 and H 2 S or H 2 Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio R V = [chalcogen/ silane]. Infrared spectroscopy is used to explore the bonding structure of the alloy.The material exhibits hydrogen-induced bands, normally observed in a-Si:H spectra and other chalcogen-induced bands resulting from bonding chalcogen atoms with hydrogen and silicon. Analysis of the vibrational spectra of this material reveals the presence of significant levels of Si-chalcogen-SiH n configurations. Optical and electrical measurements show that increasing the chalcogen content results in an increase of the optical (Tauc) gap and a decrease in dark conductivity and photoconductivity. Subgap absorption measurements are employed to probe the Urbach energy and defect density. Upon increasing the chalcogen content, a broadening of band tails and an increase in defect density is observed. These results are shown to be consistent with photoluminescence measurements carried out on these materials.

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“…To verify any possible bias in the data, we apply the same model to a-Si, C:H reported by Saito et al [6]. The best fit to the data is shown as a dotted line in the inset of …”

Section: Modeling the Compositional Dependence Of The Energy Gapmentioning

confidence: 97%