In this paper, we propose a new integrated gate driver circuit for random sensing operation of external compensated organic light‐emitting diode (OLED) display using oxide thin‐film transistor (TFT). Using this technology, we successfully launched 55‐inch and 65‐inch ultrahigh definition OLED TVs with gate in panel (GIP) circuit. The structure of the existing OLED TVs implemented gate signals through the gate integrated circuits (ICs) attached to the left and right sides of the panel. The structure using the gate IC was inferior to the panel structure using the GIP in terms of process and product design and cost. Thus, we propose a new oxide GIP circuit for OLED TV. Like the previous gate IC model, the proposed GIP circuit successfully implemented the random sensing function during the display operation. This GIP circuit is also designed to overcome the problems caused by the negative Vth characteristics of the oxide device.
In this paper, we propose a new integrated gate driver circuit for sensing operation of external compensated OLED display using IGZO TFT. Using these technologies, we successfully launched 55‐inch and 65‐inch ultra‐high‐definition OLED TVs.
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