15‐2: <i>Distinguished Paper:</i> Integrated Gate Driver Circuit Technology with IGZO TFT for Sensing Operation

Kim, In June; Noh, Seok Hwan; Ban, Myung Ho; Son, Ki Min; Han, In Hyo; Shin, Hun Ki; Oh, Kyoung-Hwan; Kim, Bum Sik; Kang, In Byeong

doi:10.1002/sdtp.12888

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…At the same time, organic light-emitting diodes (OLEDs) are more and more popular due to their extremely black, no light leakage and short response time [6]. In addition, high resolution and narrow bezel are also important indicators for evaluating displays [7].…”

Section: Introductionmentioning

confidence: 99%

P‐247: Late‐News Poster: Integrated Gate Driver Circuit with Self‐compensation Function Using Oxide TFTs for AMOLED Displays

Feng,

Li,

et al. 2024

Symp Digest of Tech Papers

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In this paper, we demonstrate a novel GOA (gate driver on array) circuit which has a self‐compensation function. This circuit not only reduces the number of TFTs but also improves the reliability characteristics of AMOLED panels. Meanwhile there is no additional cost compared to conventional structure. The proposed GOA circuit in 5‐inch experiment panel had passed 1000 hours of high temperature (60°C;) reliability test.

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Section: Introductionmentioning

confidence: 99%

P‐247: Late‐News Poster: Integrated Gate Driver Circuit with Self‐compensation Function Using Oxide TFTs for AMOLED Displays

Feng,

Li,

et al. 2024

Symp Digest of Tech Papers

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“…Amorphous oxide semiconductor (AOS) TFTs, which are represented by amorphous InGaZnO (a-IGZO) TFTs, are mainly used in active matrix organic light-emitting diode (AMOLED) displays based on the advantages of high mobility (∼30 cm 2 /(V s)), low cost, and large-area production. − Low-temperature polycrystalline silicon (LTPS) TFT has excellent performance and reliability, but it is limited in application to large AMOLED displays due to relatively high process temperature, high leakage current, and difficulty with a large area. − Therefore, AOS TFTs are suitable for application to next-generation displays including free-form types due to the low-temperature process (<350 °C). − …”

Section: Introductionmentioning

confidence: 99%

Fatigue Effect of Stretchable a-InGaZnO TFT on PI/PDMS Substrate under Repetitive Uni/Biaxial Elongation Stress

Lee

Park

2022

ACS Appl. Electron. Mater.

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We examine the fatigue effects of repeated elongation stress for a fabricated a-IGZO thin-film transistor (TFT) on an island polyimide (PI)/poly(dimethylsiloxane) (PDMS) substrate. The repeated elongation stress evaluation was performed in both a uniaxial direction with 10, 30, and 50% strain and biaxial direction with 10, 20, and 30% strain for 50 000 cycles. The a-IGZO TFTs on the island PI exhibit the following parameters: Vth : −0.91 ± 0.30 V, μ sat : 26.3 ± 0.61 cm2/(V s), and SS: 0.40 ± 0.02 V/decade. As a result of the repeated elongation stress in the maximum evaluated elongation (uniaxis: 50% and biaxis: 30%), the subthreshold swing (SS) increased by about 0.20 V/decade in all directions, and the saturation mobility decreased only in the x-axis direction (Δμ sat : 26.30 → 21.43 cm2/(V s)). Through XPS analysis and TCAD simulation, it was confirmed that SS deteriorated due to an increase of the oxygen-vacancy-related defects (NGA and NGD ) in the IGZO channel layer after repeated elongation stress. The transmission line method (TLM) confirmed that contact resistance increased when stretched only in the x-axis direction. In addition, the positive bias stress (PBS) test showed abnormal behavior including an additional SS-degradation-induced Vth negative shift after repeated elongation stress in all directions. Consequently, the degradation mechanism of both the electrical properties and bias stability for the stretchable a-IGZO TFT was determined after elongation stresses.

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“…Amorphous metal oxide semiconductor (AOS) thin-film transistors (TFTs), which are represented by amorphous InGaZnO (a-IGZO) TFTs, are widely used in large active matrix organic light-emitting diode (AMOLED) displays because of their high mobility (∼10 cm 2 /V s), low-cost processing, and large-area uniformity. − Due to their low-temperature processing (<350 °C), AOS TFTs have a competitive edge as a backplane material for soft electronic devices such as wearable healthcare devices, e-skins, and foldable/rollable smart phones. − Compared to rigid glass substrates, flexible/stretchable polymer substrates for soft electronic devices have lower thermal stability. , Thus, they require a lower-temperature panel fabrication process. Compared to the AOS TFTs, low-temperature poly-silicon (LTPS) TFTs exhibit high mobility characteristics (>100 cm 2 /V s) but are limited by a relatively high process temperature (>350 °C) and high power consumption. − Additional advantages of AOS TFTs include their high transparency and low off-state current based on the large optical band gap (>3 eV) characteristics and very low minority carrier (hole) concentration. − Based on these benefits, AOS TFTs can be applied to all-transparent next-generation displays and wearable electronic devices. , …”

Section: Introductionmentioning

confidence: 99%

Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application

Han

Lee

Kim

et al. 2021

ACS Appl. Electron. Mater.

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In this work, we examined the mechanical durability of island-type a-IGZO thin-film transistors (TFTs). Island TFTs were fabricated on polyimide (PI) islands and were transferred to a thermoplastic polyurethane (TPU) film. In repeated bending tests with a 1.5 mm bending radius, island TFTs showed less electrical property deterioration than TFTs on a PI film. We confirmed that the TPU, which has a lower elastic modulus compared to PI, effectively reduced the curvature of PI island even under the same bending test conditions. Furthermore, an organic passivation layer was applied on the upper part of the PI island. The 3 μm thick organic passivation layer made the TFT layer more stable against bending and elongation stress. Island TFTs with an organic passivation layer showed a change in the saturation mobility of only −2.3% and a change in the threshold voltage of −0.22 V even after 250 000 repetitive bending tests. Additionally, no change in electrical properties was observed even after 10 000 repeated stretching test cycles under 30% uniaxial elongation. Finally, we fabricated island-type logic circuits based on a-IGZO TFTs for wearable electronic applications. Using the organic passivation layer, we showed that the NMOS pseudoinverter and NAND gate also operated without significant deterioration in 100 000 repeated bending cycles and 5000 repeated stretching cycles. After applying repeated mechanical stresses, the high output voltage (V OH) and low output voltage (V OL) of the inverter only changed from 8.85 to 8.93 V and from 0.44 to 0.50 V, respectively. In NAND gates, V OH and V OL only changed slightly from 8.46 to 8.56 V and from 0.45 to 0.55 V, respectively.

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15‐2: Distinguished Paper: Integrated Gate Driver Circuit Technology with IGZO TFT for Sensing Operation

Abstract: In this paper, we propose a new integrated gate driver circuit for sensing operation of external compensated OLED display using IGZO TFT. Using these technologies, we successfully launched 55‐inch and 65‐inch ultra‐high‐definition OLED TVs.

Cited by 5 publications

References 11 publications

P‐247: Late‐News Poster: Integrated Gate Driver Circuit with Self‐compensation Function Using Oxide TFTs for AMOLED Displays

P‐247: Late‐News Poster: Integrated Gate Driver Circuit with Self‐compensation Function Using Oxide TFTs for AMOLED Displays

Fatigue Effect of Stretchable a-InGaZnO TFT on PI/PDMS Substrate under Repetitive Uni/Biaxial Elongation Stress

Mechanical Durability of Flexible/Stretchable a-IGZO TFTs on PI Island for Wearable Electronic Application

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