A novel technology for the precise fabrication of quartz resonators for MEMS applications is introduced. This approach is based on the laser-induced chemical etching of quartz. The main processing steps include femtosecond UV laser treatment of a Cr-Au-coated Z-cut alpha quartz wafer, followed by wet etching. The laser-patterned Cr-Au coating serves as an etch mask and is used to form electrodes for piezoelectric actuation. This fabrication approach does not alter the quartz’s crystalline structure or its piezo-electric properties. The formation of defects, which is common in laser micromachined quartz, is prevented by optimized process parameters and by controlling the temporal behavior of the laser-matter interactions. The process does not involve any lithography and allows for high geometric design flexibility. Several configurations of piezoelectrically actuated beam-type resonators were fabricated using relatively mild wet etching conditions, and their functionality was experimentally demonstrated. The devices are distinguished from prior efforts by the reduced surface roughness and improved wall profiles of the fabricated quartz structures.
Laser micromachining is the chosen method for vertical interconnect access point (VIA) formation in flex PCB layers. Even so, this method suffers from several inherent physical issues as a result of the intense localized heating causing strong Marangoni convection and the buildup of recast along the VIA upper crater walls while also scattered particle debris and oxidation of copper across the surface. The mitigation of the height and radius of this recast layer is critical for the following build-up process and device functionality and reliability. This is currently a major technology inhibitor to the adoption of flex PCBs for high-power electronics. In this study, we present experimental results showing the use of engineered sacrificial layers that coat the surface of the flex PCB substrate during the laser micromachining process. Optimization of this engineered sacrificial layer resulted in a major improvement in recast quality and debris control as well as reducing the oxide formation while increasing the laser drilling efficiency, attributable to increased surface pressure on the substrate. In this paper, we describe the methods and materials used in the development of sacrificial layers and show the positive impact it achieves on improving and modifying the plasma characteristics throughout the overall laser drilling process.
We experimentally investigate the removal of several microns thick plasma-enhanced chemical vapour deposition SiO2 films by a localized dynamic fracture due to confined laser–matter interaction with the silicon substrate (punching) using 10 ps laser pulses at 355 nm. A near order of magnitude increase in the punching threshold fluence (from ∼0.1 to ∼1 J cm−2) is observed as the ratio between the spot size and the film thickness is scaled down, in order to produce high aspect ratio openings in the film. An opening radius of about twice the film thickness appears to be an approximate practical limit. A high aspect ratio opening is created by a cone fracture of the film and the ejection of a conoid film segment (flyer). We discuss mechanisms of brittle fracture that may lead to the observed patterns.
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