The ability to manipulate individual atoms, ions or photons allows controlled engineering of the quantum state of small sets of trapped particles; this is necessary to encode and process information at the quantum level. Recent achievements in this direction have used either trapped ions or trapped photons in cavity quantum-electrodynamical systems. A third possibility that has been studied theoretically is to use trapped neutral atoms. Such schemes would benefit greatly from the ability to trap and address individual atoms with high spatial resolution. Here we demonstrate a method for loading and detecting individual atoms in an optical dipole trap of submicrometre size. Because of the extremely small trapping volume, only one atom can be loaded at a time, so that the statistics of the number of atoms in the trap, N, are strongly sub-poissonian (DeltaN2 approximately 0.5N). We present a simple model for describing the observed behaviour, and we discuss the possibilities for trapping and addressing several atoms in separate traps, for applications in quantum information processing.

Nanoscale electronics and photonics are among the most promising research areas providing functional nano-components for data transfer and signal processing. By adopting metalbased optical antennas as a disruptive technological vehicle, we demonstrate that these two device-generating technologies can be interfaced to create an electronically-driven self-emitting unit. This nanoscale plasmonic transmitter operates by injecting electrons in a contacted tunneling antenna feedgap. Under certain operating conditions, we show that the antenna enters a

We study emission of photoelectrons from plasmonic nanoparticles into surrounding matrix. We consider two mechanisms of the photoelectric effect from nanoparticles -surface and volume ones, and use models of these two effects which allow us to obtain analytical results for the photoelectron emission rates from nanoparticle. Calculations have been done for the step potential at surface of spherical nanoparticle, and the simple model for the hot electron cooling have been used. We highlight the effect of the discontinuity of the dielectric permittivity at the nanoparticle boundary in the surface mechanism, which leads to substantial (by ~5 times) increase of photoelectron emission rate from nanoparticle compared to the case when such discontinuity is absent. For plasmonic nanoparticle, a comparison of two mechanisms of the photoeffect was done for the first time and showed that surface photoeffect, at least, does not concede the volume one, which agrees with results for the flat metal surface first formulated by Tamm and Schubin in their pioneering development of quantummechanical theory of photoeffect in 1931. In accordance with our calculations, this predominance of the surface effect is a result of effective cooling of hot carriers, during their propagation from volume of the nanoparticle to its surface in the scenario of the volume mechanism. Taking into account both mechanisms is essential in development of devices based on the photoelectric effect and in usage of hot electrons from plasmonic nanoantenna.1I.

1 We present a quantum mechanical approach to calculate broadening of plasmonic resonances in metallic nanostructures due to collisions of electrons with the surface of the structure. The approach is applicable if the characteristic size of the structure is much larger than the de Broglie electron wavelength in the metal. The approach can be used in studies of plasmonic properties of both single nanoparticles and arrays of nanoparticles. Energy conservation is insured by a self-consistent solution of Maxwell's equations and our model for the photon absorption at the metal boundaries. Consequences of the model are illustrated for the case of spheroid nanoparticles and results are in good agreement with earlier theories. In particular, we show that the boundary-collision broadening of the plasmonic resonance in spheroid nanoparticles can depend strongly on the polarization of the impinging light. 1 A. V. Uskov P.N. Lebedev Physical Institute,