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Optical and computed evaluation of keyhole diffractive imaging for lensless x-ray microscopy Hard x-ray nanobeam characterization by coherent diffraction microscopy Appl. Phys. Lett. 96, 091102 (2010); 10.1063/1.3332591 Forward modeling method for microstructure reconstruction using x-ray diffraction microscopy: Single-crystal verification Rev.The goal is to nondestructively reconstruct the structure of a fabricated integrated circuit using x-ray diffraction measurement. In particular, to detect any deviation from the specification of the circuit design. Determining phase is critical. However, additional information exists as the phase of the design specification is known. Further phase information is determined by oversampling and a better estimate of the correct phase is obtained through convex optimization. The authors illustrate this technique with a simulated one dimensional example and a simple two dimensional experimental sample.

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Articles you may be interested inDetermination of the maximum energy loss for electron stopping power calculations and its effect on backscattering electron yield in Monte-Carlo simulations applying continuous slowing-down approximation Monte Carlo study of electron-beam penetration and backscattering in multi-walled carbon nanotube materials: The effect of different scattering models J. Appl. Phys. 113, 084303 (2013); 10.1063/1.4792231 Monte Carlo modeling of electron backscattering from carbon nanotube forestsThe Monte Carlo method is widely used to simulate the signal from a scanning electron microscope. Although the results closely match the actual signal, the method is inherently slow due to the repeated calculation of random trajectories. The authors re-examine the alternative approach of using an approximate model to describe the signal. The authors develop a progressive approximate model which describes the spatial probability distribution of an electron along its entire path. The model also includes information about the angular and energy distribution of the electron. The model is compared to the Monte Carlo method by determining the yield of backscattered electrons as the beam is scanned across a step feature. For this simple feature the model-based approach computes the signal approximately two orders of magnitude faster.