Focussing on unipolar SiC power devices a variety of applications are described, where cost reduction can be a achieved on system level even for SiC device costs being several times higher than the costs of the competing Si devices. Based on the specific properties of SiC devices like Schottky diodes and JFETs it is explained with the help of these examples how this is attainable.
In this paper it will be explained with the help of examples, how SiC power devices can conquer their market. It requires a re-optimizing of power applications taking into account the sum of properties offered by this new SiC technology. This is necessary because the costs per area for SiC devices are still two orders of magnitude higher compared to competing Si devices.
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