SiC Power Devices: How to be Competitive towards Si-Based Solutions?

Rupp, Roland; Zverev, I.

doi:10.4028/www.scientific.net/msf.433-436.805

Cited by 19 publications

(9 citation statements)

References 7 publications

(9 reference statements)

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“…Since B 1 = A 5 = 0, the matrix element T 22 must cancel. Solving now equation (11), we obtain the results shown in figure 10 for 3C and 8H ribbons (full lines). Clearly, with respect to the previous approximation (dashed lines) the triangular well-asymptotic behaviour is now a direct by-product of the calculation.…”

Section: Transfer Matrix Methodsmentioning

confidence: 97%

“…Only integers are used, in which the first one denotes the number of consecutive + signs, the second the number of consecutive − signs, the third the number of consecutive + signs again, etc. Without any loss of information, the previous polytypes can be denoted as (3), (11), ( 22), ( 33) and (32) 3 . To account for the two rotational variants of 3C, one introduces the additional notation (3) * .…”

Section: Structural Aspectsmentioning

confidence: 99%

“…The positive point, however, is that they compete so well with Si p-i-n junctions that (since the first introduction by Infineon and Cree/Microsemi in the spring and fall of 2001, respectively) many manufacturers have moved into the field. The main reason is that, in this way, one can improve the power factor correction (PFC) of computer supplies while, at the same time, get benefits in terms of cost and size reduction [11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Camassel¹,

Juillaguet²

2007

J. Phys. D: Appl. Phys.

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We present a review of the different optical techniques that can be used to investigate the presence of as-grown and/or process-induced stacking faults (SFs) in 4H–SiC epitaxial layers. A SF is always a finite admixture of different polytypes, and we begin with a brief review of the systematic of SiC polytype structure and electronic properties. Next, we discuss the optical signature and compare with the results of several model calculations, taking successively into account the effect of valence band offset, internal polarization and non-homogeneity of the potential well. Finally, we consider cathodo-luminescence and micro-photoluminescence techniques and show that, in both cases, some screening of the built-in electric field can be achieved.

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Section: Transfer Matrix Methodsmentioning

confidence: 97%

Section: Structural Aspectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Camassel¹,

Juillaguet²

2007

J. Phys. D: Appl. Phys.

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“…Silicon carbide (SiC) is a promising semiconductor for the fabrication of high power, high voltage and high temperature Schottky barrier diodes (SBD) due to its excellent material properties. Silicon carbide SBDs with moderate blocking voltages (in the range of 300 to 1200 V) are of great commercial interest for use in switch mode power supplies, where the suppression of the reverse recovery transients allows smaller active and passive components to be used [1]. Devices with blocking voltages in this range are available commercially [2], as well as being actively researched [3].…”

Section: Introductionmentioning

confidence: 99%

Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes

Blasciuc-Dimitriu¹,

Horsfall²,

Wright³

et al. 2004

Semicond. Sci. Technol.

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The prediction of reverse bias I-V characteristics in 4H-SiC Schottky barrier diodes over a wide range of temperatures and bias is not possible using established modelling techniques. This paper reports on the development of an established general model for both reverse and forward characteristics that is applied to 4H-SiC Schottky barrier diodes. This model is based on the self-consistent evaluation of the quantum-mechanical probabilities of carriers to traverse the metal-semiconductor barrier. These are integrated over all possible energies to describe the transport process not only at energies below the barrier but also at energies equal and superior to the barrier height. In this manner the model naturally covers the entire range of the traditional theories of tunnelling, thermionic-field and thermionic emission. The model relies on a single set of parameters, extracted from the experimental forward characteristics of each device using a modified Norde method, to predict both forward and reverse characteristics. The model is compared to measured I-V characteristics, in both forward and reverse bias conditions, for 4H-SiC Schottky barrier diodes fabricated using two different edge termination technologies. Comparisons with models previously described in the literature show a superior fit to experimental data, without the need for additional fitting parameters.

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“…With the latest ratings, it is foreseen that these diodes may replace Si bipolar diodes in medium power motor drive modules. Power Factor Correction and High-Voltage Secondary Side Rectification are applications of 600 V SiC SBDs [4]. Besides, it is expected that SBDs can be advantageously applied for blocking voltages up to 3.5 kV.…”

Section: Sic Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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SiC Power Devices: How to be Competitive towards Si-Based Solutions?

Cited by 19 publications

References 7 publications

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes

Wide Band Gap Semiconductor Devices for Power Electronics

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