The influence of thermal annealing on photoelectrical properties of TiO 2 -n-Si structures is studied. It is shown that growth of reverse current during radiation begins at threshold voltage U t . Its value depends on annealing temperature. Persistent photoconductivity is observed only in such TiO 2 -Si structures if the oxide titanium film contains anatase crystallites. Photoconductivity is observed in such TiO 2 -Si structuresif the oxide titanium film contains anatase crystallites.
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