Conduction mechanism of metal-TiO 2 –Si structures

Kalygina, V. M.; Egorova, I. S.; Prudaev, I. А.; Толбанов, О. П.; Atuchin, Victor V.

doi:10.1016/j.cjph.2016.08.011

Cited by 18 publications

(5 citation statements)

References 17 publications

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“…However, it is evident that Ga 2 O 3 films deposited at 700 °C exhibit some porous structure although the average size generally increases with T s . It should be pointed that this trend is general for oxide films and, earlier, the surface morphology variation and other properties improvement were observed for different oxides . The average grain size increases from 15 to 35 (±2) nm with increasing T s .…”

Section: Resultssupporting

confidence: 72%

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Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

Battu

Ramana

2018

Adv Eng Mater

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Nanocrystalline and amorphous Ga2O3 films (%200 nm) with variable structural quality are produced by sputter-deposition by varying the substrate temperature (T s ¼ 25-700 C). The effect of T s is significant on the microstructure and mechanical behavior of Ga 2 O 3 films. The variation in mechanical behavior studied by nano-indentation and nano-scratch testing reveal distinct trends, which are directly related to the structure and morphology of Ga 2 O 3 films. All the Ga 2 O 3 films deposited at T s < 500 C are amorphous; the amorphous-to-crystalline transformation occurs at T s ¼ 500 C. Ga 2 O 3 films deposited at T s ! 500 C are nanocrystalline, β-phase. The corresponding mechanical characteristics, namely the hardness (H) and elastic modulus (E r ), show a strong correlation with structural characteristics. The H and E r increases from 17 to 27 GPa and 250 to 290 GPa, respectively, with increasing T s from 25 to 700 C. The plasticity index, which is the ratio of H/E r , is almost constant for the Ga 2 O 3 films. The strain-rate sensitivity measurements performed to determine the applicability in practical applications indicate the best performance of size controlled, nanocrystalline Ga 2 O 3 films, which can be mechanically regarded as nano-composite structures. The mechanical characteristics, scratch behavior, and strain rate sensitivity indicate the role of microstructure on the mechanical performance of Ga 2 O 3 films.Gallium oxide exhibits polymorphism. The α, β, γ, δ, and e phases of Ga 2 O 3 are widely known. [16,18,[25][26][27] Among these polymorphs, monoclinic β-Ga 2 O 3 is thermally stable with a band gap of %5 eV and high breakdown field 8 MV cm À1 . [28] β-Ga 2 O 3 exhibits n-type conductivity, which is related to donor centers involving oxygen vacancies and/or impurities. The high thermal stability of β-Ga 2 O 3 (melting point %1900 C) is quite useful in the design and development of high-temperature chemical sensors, which can be readily used in automotive industry and power plants. [2] Furthermore, the high-temperature stability coupled with deep ultraviolet transparency makes Ga 2 O 3 based materials as the potential candidates for chemical sensors in extreme environments and transparent electrodes in UV optoelectronics, photonics, and thin-film transistors. [29][30][31] However, in all these applications, fundamental understanding of the structure, thermodynamic conditions, and mechanical characteristics is the key to achieving enhanced device performance.

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Section: Resultssupporting

confidence: 72%

“…It should be pointed that this trend is general for oxide films and, earlier, the surface morphology variation and other properties improvement were observed for different oxides. [47][48][49][50] The average grain size increases from 15 to 35 (AE2) nm with increasing T s .…”

Section: Surface Morphologymentioning

confidence: 99%

Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

Battu

Ramana

2018

Adv Eng Mater

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“…[61][62][63][64] Thus, several works reported MOS devices with similar band diagrams as shown in Figure 4. [62][63][64][65][66][67][68] Nonetheless, the analysis of electrical measurements performed on MOS structures with the mentioned band diagram should be carried out with care, since it is expected an increased leakage current, considering that electrons do not have a barrier between the oxide and the semiconductor. [67,69,70] Regarding the parameters commonly estimated from the C-V curves, [34] A. G. Scheuermann et al mentioned that the oxide capacitance value (henceforth named C in ) may be affected by the possible leakage current, whereas the flat-band voltage (V fb ) should not be affected.…”

Section: Inverted Mos Structurementioning

confidence: 99%

Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization

Cunha

Barreiros

Curado

et al. 2021

Adv Materials Inter

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“…Currently, there are few studies and empty reports on such temperature effects on LIDT. Moreover, previous studies showed that the crystallinity of oxide films increased with the rise of temperature by different preparation methods [18][19][20]. The crystal phase transition temperature of Nb 2 O 5 films often exceeds 673 K, which is much higher than that of HfO 2 , ZrO 2 , and TiO 2 films [21].…”

Section: Introductionmentioning

confidence: 98%

Niobium Pentoxide Films with High Laser-Induced Damage Threshold under High Temperature Environment

et al. 2022

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Laser damage resistance of films is the key to the performance and durability of high-power laser systems. High temperature, however, often leads to a certain degree of decline in film properties. Here, aiming to explore the mechanism of laser damage under high temperatures, Nb2O5 films were prepared using sol–gel method with NbCl5 as precursor and citric acid as additive. The effect of annealing temperatures in optical performance, microstructure, surface morphologies, and chemical composition of films were studied. Further investigation was carried out of the laser-induced damage threshold (LIDT) under different in situ high temperatures of the as-deposited films. The results showed that the films had prominent optical transmittance and high LIDT. Under 293 K, the LIDT of the film was the highest of 24.8 J/cm2. The increase of temperature brought down the LIDT of the films. It was attributed to the occurrence of oxygen vacancies, the sharp increase of temperature, and rise of defects and destruction of network structure. In this study, even though the LIDT of the film decreased a lot at 523 K, it was still high up to 14.1 J/cm2, representing the great potential for applications in authentic high-temperature environments.

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Conduction mechanism of metal-TiO 2 –Si structures

Cited by 18 publications

References 17 publications

Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

Mechanical Properties of Nanocrystalline and Amorphous Gallium Oxide Thin Films

Perovskite Metal–Oxide–Semiconductor Structures for Interface Characterization

Niobium Pentoxide Films with High Laser-Induced Damage Threshold under High Temperature Environment

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