Optically driven method for magnetically levitating diamagnetic material using photothermal effect J. Appl. Phys. 111, 023909 (2012) Simultaneous observation of magnetostatic backward volume waves and surface waves in single crystal barium ferrite platelets with in-plane easy axis J. Appl. Phys. 111, 023901 (2012) The effect of Fe2+ ions on dielectric and magnetic properties of Yb3Fe5O12 ceramics J. Appl. Phys. 111, 014112 (2012) Direct observation of magnetic phase coexistence and magnetization reversal in a Gd0.67Ca0.33MnO3 thin film Appl. Phys. Lett. 100, 022407 (2012) Epitaxial thin films of p-type spinel ferrite grown by pulsed laser deposition Appl. Phys. Lett. 99, 242504 (2011) Additional information on Appl. Phys. Lett.
The properties of thick BaSc x Fe 12Ϫx O 19 (0.3ϽxϽ0.6) scandium hexaferrite films were measured by static and microwave field techniques. Films were deposited by pulsed laser ablation onto c-plane sapphire at oxygen pressures of 20 and 50 mTorr. Vibrating sample magnetometer measurements as corroborated by x-ray data showed that the films below 3 m had easy axis of magnetization ͑c-axis͒ normal to the film plane with saturation magnetization values of 3.0-3.8 kG. From the ferrimagnetic resonance frequency versus external magnetic field, we deduced a g value of 1.96 Ϯ0.03 and uniaxial anisotropy field of ϳ10 kOe. The ferrimagnetic resonance linewidth for the film thicker than 5 m was maximum at 32 GHz and decreased with increasing frequency, indicating evidence for nonuniform magnetic field scattering internally. However, the linewidths were lower for films having thickness below 3 m.
Thick films of scandium-substituted BaScxFe12−xO19 (x=0, 0.4, 0.6) were deposited by pulsed laser ablation deposition onto A-plane (1120) sapphire (Al2O3) substrates to yield highly oriented films having the crystallographic c-axis ([0001]) in the film plane. Selected films were characterized by x-ray diffraction, electron microscopy, magnetometry and torque magnetometry measurements. These structural and magnetic measurements show that dense films have excellent in-plane uniaxial anisotropies and good square loop behaviors. Such films will be useful for planar latched phase shifters that can be integrated into microwave integrated circuits.
Experimental results are shown for the structural and stress behaviors of c-axis oriented barium hexaferrite films on c-plane sapphire (Al2O3) substrates as a function of oxygen growth pressure and film thickness. It is shown that films deposited at 20 mTorr crack and delaminate at thicknesses above 15 µm, but that evidence for these large stresses is not apparent in either substrate curvature measurements or distortion of the c-axis lattice constant for thinner films (< 2 µm). In contrast, films (< 4 µm) deposited at 300 mTorr show large substrate curvatures that relax with increasing film thickness, in tandem with the formation of first large outgrowths, and then polycrystalline grains as the original c-axis film texture is randomized. Correlations between these observations are made to explain the complex evolution of properties in these films.
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