A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10–30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.
We report the formation of porous p-type 6H-Sic. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of l-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk Sic substrate. Quantum.confinement is discussed as a possible mechanism for the luminescence effects.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.