Characterization of nanocrystallites in porous <i>p</i>-type 6H-SiC

Shor, Joseph; Bemis, L.; Kurtz, A. D.; Grimberg, I.; Weiss, B. Z.; MacMillian, M. F.; Choyke, W. J.

doi:10.1063/1.357352

Cited by 91 publications

(54 citation statements)

References 17 publications

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“…Quantum confinement effect has also been demonstrated in other nanoscale SiC systems [9,10]. However, SiC quantum dots obtained by etching hexagonal SiC (6H-SiC) have yielded contradictory results on quantum confinement effects [11,12]. The observation of the quantum effects makes SiC nanostructures an even more interesting system because it suggests a possibility of designing SiC based materials with blue or higher frequency emission, e.g., UV.…”

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confidence: 98%

Electronic and mechanical properties of wurtzite type SiC nanowires

Durandurdu

2006

Physica Status Solidi (b)

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One-dimensional nanomaterials have attracted considerable attention due to their potential use in nanotechnology. To date various types of nanostructures have been synthesized by a number of experimental techniques. Silicon carbide (SiC) based nanoscale materials are currently attracting great interest since SiC is a promising material for next generation of electronic devices. SiC is expected to have some advantages over silicon based nanostructures because of its outstanding physical properties, such as excellent chemical stability, a wide band gap, high stiffness, high hardness, high thermal conductivity and a high melting point.Recent experiments have revealed a variety of SiC based nanoscale materials. Sun et al. have produced SiC nanotubes and nanowires with various shapes and structures through the reaction of silicon with multiwalled carbon nanotubes at different temperatures [1]. SiC nanowires with 10 to 30 nm diameters have been grown by chemical vapor deposition technique [2,3]. Using an iron particle as a catalyzer, Zhou et al. [4] manage to reduce the SiC wire size to 5 nm. SiC nanowires also have been synthesized by arcdischarge [5,6] and by direct chemical reaction [7]. However, little is known about the atomic structures and physical properties of these SiC nanowires. Recently, Rurali [8] has shown that a pure SiC nanowire grown along the [100] direction with a bulk zinc-blende core is metallic due to the presence of surface states, but hydrogen terminated wires exhibit quantum confinement effect, i.e., a broadening of band gap energy. Quantum confinement effect has also been demonstrated in other nanoscale SiC systems [9,10]. However, SiC quantum dots obtained by etching hexagonal SiC (6H-SiC) have yielded contradictory results on quantum confinement effects [11,12]. The observation of the quantum effects makes SiC nanostructures an even more interesting system because it suggests a possibility of designing SiC based materials with blue or higher frequency emission, e.g., UV.A wurtzite type SiC nanorod with an average diameter of 20 nm and a length of 100 nm has been obtained by pulsed laser ablation on 6H-SiC near 1200 °C [13]. Based on the known stability of the unreconstructed (1010) surface of the wurtzite structure [14], one expects that wurtzite type SiC nanorods (W-SiCNRs) or nanowires (W-SiCNWs) might show remarkable stability. However, a detailed understanding of the structure of thin W-SiCNRs and W-SiCNWs and of their electronic and mechanical properties is required for their future developments and applications in nanotechnology. In this Letter, we carry out ab initio calculations to explore the one-dimensional behavior of pure and hydrogen passivated SiC nanowires grown along [0001] direction of the wurtzite structure. Such an investigation is also helpful in understanding the stability and physical properties of other hexagonal-type (4H and 6H) SiC nanowires/nanorods.The calculations were performed with the SIESTA code [15], which implements density functional theory (DFT) with the p...

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confidence: 98%

Electronic and mechanical properties of wurtzite type SiC nanowires

Durandurdu

2006

Physica Status Solidi (b)

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“…In both cases the PL spectrum demonstrates a near-band-gap peak and a broad band of yellow luminescence. For anodized GaN layer, the near-band-gap peak experienced an %11 meV blue shift, which is not unusual for porous semiconductors [11], and a slight broadening. The peak also became weaker as related to the yellow luminescence band.…”

Section: Resultsmentioning

confidence: 99%

Photoconductivity in Porous GaN Layers

Mynbaeva

Bazhenov

Mynbaev

et al. 2001

phys. stat. sol. (b)

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“…The large optical band gap: from 2.36 eV in 3C-SiC up to 3.33 eV in 2H-SiC, makes SiC NCs a good candidate for the blue and ultraviolet LEDs [3,4]. SiC-based homoepitaxial structures formed on the porous SiC substrate have been reported recently [5].…”

Section: Introductionmentioning

confidence: 98%

Emission related to exciton‐polariton coupling in porous SiC

Torchynska

Cano

Hernández

et al. 2011

Phys. Status Solidi C

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The paper presents the results of SiC nanocrystal (NC) characterization using the photoluminescence (PL), its temperature dependence and X‐ray diffraction (XRD) techniques. It is revealed that original n‐type 6H‐SiC wafers and porous 6H‐SiC layers consisted inclusions of 2H‐SiC, 4H‐SiC, and 8H‐SiC polytypes. The photoluminescence study has shown that in porous SiC layers the emission intensity of high energy PL bands enlarges. Temperature dependences of high energy PL bands testify that these PL bands related to excitons bounded at nitrogen donors in different SiC polytypes. The PL intensity enhancement of donor‐bound exciton PL bands in the big size (50‐250nm) SiC nanocrystals has been attributed to the realization of exciton weak confinement and exciton‐polariton coupling in SiC nanocrystals. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Characterization of nanocrystallites in porous p-type 6H-SiC

Cited by 91 publications

References 17 publications

Electronic and mechanical properties of wurtzite type SiC nanowires

Electronic and mechanical properties of wurtzite type SiC nanowires

Photoconductivity in Porous GaN Layers

Emission related to exciton‐polariton coupling in porous SiC

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