The magnetophotoluminescence from thin lnSb layers grown by molecular beam epitaxy (MBE) on lnSb and GaAs substrates and from MBE lnAs on GaAs substrates is studied at low temperatures. contains up to five emission bands. From the observed magnetic field and excitation level dependence of the bands it is inferred that their origin is related to radiative recombination of an exciton-impurity complex, to direct recombination of a free electron with an uncharged acceptor, to recombination at an A i centre and at deep defects. By comparison with the PL from the substrate alone it is shown that two of the defects responsible are unique to the epilayer.The PL spectrum of epitaxial layers of lnSb on GaAs shows a single broad band due to band-to-band radiative recombination in the lnSb film.The PL of high-mobility lnAs layers grown heteroepitaxially at 490% on GaAs shows a single emission line. Samples grown at lower temperature, resulting in lower mobility, show a second line due to direct recombination of a free electron with an uncharged shallow acceptor, suggesting a wrrelation between the reduction of mobility and the presence of this acceptor.With undoped homoepitaxial InSb, the photoluminescence (PL) spectrum
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