Magnetophotoluminescence of MBE-grown InSb and InAs

Abstract

The magnetophotoluminescence from thin lnSb layers grown by molecular beam epitaxy (MBE) on lnSb and GaAs substrates and from MBE lnAs on GaAs substrates is studied at low temperatures. contains up to five emission bands. From the observed magnetic field and excitation level dependence of the bands it is inferred that their origin is related to radiative recombination of an exciton-impurity complex, to direct recombination of a free electron with an uncharged acceptor, to recombination at an A i centre and at deep defects. By comparison with the PL from the substrate alone it is shown that two of the defects responsible are unique to the epilayer.The PL spectrum of epitaxial layers of lnSb on GaAs shows a single broad band due to band-to-band radiative recombination in the lnSb film.The PL of high-mobility lnAs layers grown heteroepitaxially at 490% on GaAs shows a single emission line. Samples grown at lower temperature, resulting in lower mobility, show a second line due to direct recombination of a free electron with an uncharged shallow acceptor, suggesting a wrrelation between the reduction of mobility and the presence of this acceptor.With undoped homoepitaxial InSb, the photoluminescence (PL) spectrum

Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition

“…The reason for attributing this peak to phonon-assisted emission by previous report is because the energy separation between this peak and the intrinsic emission peak is close to the calculated optical phonon energy in InSb [21]. There are several reports on the impurity related emission with energies at 0.230, 0.228, 0.225 and 0.224 eV [22][23][24].…”

Electrical and magneto-optical of MBE InAs on GaAs

“…The error quoted for the band edge mass assumes that all the uncertainty arises from this source. However, photoluminescence (PL) from these samples shows that the band edge emission has a width of 6-10 meV [56]. This is less than the PL linewidth in homoepitaxial material, and the relative shift in the PL peak energy is less than the linewidth.…”

INSBN alloy and INSB nanowire grown by metal-organic chemical vapor deposition

“…The reason for attributing this peak to phonon-assisted emission by previous report is that the energy separation between this peak and the intrinsic emission peak is close to the calculated optical phonon energy in InSb[183]. There are several reports on the defect related emission with energies at 0.230, 0.228, 0.225 and 0.224 eV[184][185][186]. In order to further clarify the origin of this emission, PL measurement over a wide temperature range from 10 to…”