Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at 900 o C. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/µm to 2 V/µm. The current density of undoped CNT is 0.6 mA/cm 2 at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.
Studying the long-range ordering of nanopores on the anodic aluminum oxide (AAO) membranes under a hard anodization (HA) approach is crucial in producing well-aligned nanopores on the AAO membranes. Electro-polishing in a mixture of ethanol and perchloric acid for 5 min removed marks formed by rolling and produced flat surfaces on aluminum substrates. The AAO was formed by the first HA process, providing seeds for the subsequent production of uniform AAO nanopores. The second HA process carried out on the seeds produced well-aligned, uniform AAO nanopores. The AAO nanopores, varying in size and shape, were observed with voltages applied for HA. This study provides a route for controlling the size and shape of AAO nanopores by changing the applied voltages.
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