In this paper, embedded flash (eFlash) cells were fabricated for realization of multi-functions, such as systems on panels (SOPs) and threshold voltage (VTH) stabilization of flat panel displays (FPDs). Fabrication was via low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology and an oxide–nitride–oxynitride (ONOn) stack structure on glass. Poly-silicon (poly-Si) on glass, which was annealed via an excimer laser, has a very rough surface. To fabricate LTPS eFlash cells on glass with a very rough poly-Si surface, plasma-assisted oxynitridation was performed; nitrous oxide (N2O) served as a reactive gas. LTPS eFlash cells have excellent TFT electrical properties, such as VTH, a high On/Off current ratio and a low sub-threshold swing (S). The results demonstrate that eFlash cells fabricated on glass with a rough silicon surface, via an ONOn stack structure, have switching characteristics suitable for data storage, such as a low operating voltage (<±10 V) suitable for mobile FPDs, a threshold voltage window, ΔVTH, which exceeds 2.3 V, between the programming and erasing (P/E) states, over a period of 10 years, and the capacity to retain the initial ΔVTH over a period of 105 P/E operations.
A nonvolatile semiconductor memory (NVSM) device with a metal-oxide-nitride-oxynitride-polysilicon (MONOS) structure on a rough polysilicon (poly-Si) surface was fabricated using a low-temperature process and poly-Si thin film transistor (TFT) technology on glass. For the fabrication of the NVSM device on glass, plasma-assisted oxynitridation was carried out using nitrous oxide (N2O) as a reactive gas, due to the very rough surface of the poly-Si on glass annealed using an excimer laser. The ultrathin SiOxNy films obtained using the N2O plasma have a very uniform distribution on poly-Si and similar contents of oxygen and nitrogen in the peaks and valleys of the grains. The NVSM devices having a MONOS structure with a tunneling layer of ultrathin SiOxNy on glass have suitable switching and charge retention characteristics for data storage. The results demonstrate that the NVSM device made using low-temperature poly-Si TFT technology on glass reported in this paper can be used in various types of display devices.
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