This paper introduces a high volume and fast turnaround TEM sample preparation method and requirements for a 300 mm inline DualBeam (FIB/SEM) system with “hands-off” full automation. It requires a factory automation system, robust automated recipes, and an ex-situ TEM lamella liftout system. It describes the recipe structure and TEM lamella lift out procedures. The focus is on fully automated TEM sample preparation for process monitoring in manufacturing line. Two successful examples are described to demonstrate the benefit of this method. The first one is TEM sample for CA profile at M1 level. The second is TEM sample for poly crystalline (PC) line profile at post-etch.
A methodology for detecting silicide pipes on SOI technology in-line soon after their formation is described. Techniques currently exist to detect pipes in-line, but only much later in the process. This methodology, which is based on voltage contrast inspection of test structures, allows experiments to be completed more quickly providing much faster cycles of learning. Two different test structures are described. The first one was designed for other purposes but was adopted for silicide pipe detection at M1. The second was specially designed and allows pipe detection at silicide anneal, W CMP and M1. A procedure for determining the cause of buried shorts detected by the eS32 is also described. Experimental results are presented to demonstrate the benefit of this technique.
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