CONSPECTUS: Infrared photodetectors are essential to many applications, including surveillance, communications, process monitoring, and biological imaging. The short-wave infrared (SWIR) spectral region (λ = 1−3 μm) is particularly powerful for health monitoring and medical diagnostics because biological tissues show low absorbance and minimal SWIR autofluorescence, enabling greater penetration depth and improved resolution in comparison with visible light. However, current SWIR photodetection technologies are largely based on epitaxially grown inorganic semiconductors, which are costly, require complex processing, and impose cooling requirements incompatible with wearable electronics. Solution-processable semiconductors are being developed for infrared detectors to enable low-cost direct deposition and facilitate monolithic integration and resolution not achievable using current technologies. In particular, organic semiconductors offer numerous advantages, including large-area and conformal coverage, temperature insensitivity, and biocompatibility, for enabling ubiquitous SWIR optoelectronics. This Account introduces recent efforts to advance the spectral response of organic photodetectors into the SWIR. High-performance visible to near-infrared (NIR) organic photodetectors have been demonstrated by leveraging the wealth of knowledge from organic solar cell research in the past decade. On the other hand, organic semiconductors that absorb in the SWIR are just emerging, and only a few organic materials have been reported that exhibit photocurrent past 1 μm. In this Account, we survey novel SWIR molecules and polymers and discuss the main bottlenecks associated with charge recombination and trapping, which are more challenging to address in narrow-band-gap photodetectors in comparison with devices operating in the visible to NIR. As we call attention to discrepancies in the literature regarding performance metrics, we share our perspective on potential pitfalls that may lead to overestimated values, with particular attention to the detectivity (signal-to-noise ratio) and temporal characteristics, in order to ensure a fair comparison of device performance. As progress is made toward overcoming challenges associated with losses due to recombination and increasing noise at progressively narrower band gaps, the performance of organic SWIR photodetectors is steadily rising, with detectivity exceeding 10 11 Jones, comparable to that of commercial germanium photodiodes. Organic SWIR photodetectors can be incorporated into wearable physiological monitors and SWIR spectroscopic imagers that enable compositional analysis. A wide range of potential applications include food and water quality monitoring, medical and biological studies, industrial process inspection, and environmental surveillance. There are exciting opportunities for low-cost organic SWIR technologies to be as widely deployable and affordable as today's ubiquitous cell phone cameras operating in the visible, which will serve as an empowering tool for users to...

This report demonstrates high-performance infrared phototransistors that use a broad-band absorbing organic bulk heterojunction (BHJ) layer responsive from the visible to the shortwave infrared, from 500 to 1400 nm. The device structure is based on a bilayer transistor channel that decouples charge photogeneration and transport, enabling independent optimization of each process. The organic BHJ layer is improved by incorporating camphor, a highly polarizable additive that increases carrier lifetime. An indium zinc oxide transport layer with high electron mobility is employed for rapid charge transport. As a result, the phototransistors achieve a dynamic range of 127 dB and reach a specific detectivity of 5 × 10 12 Jones under a low power illumination of 20 nW/cm 2 , outperforming commercial germanium photodiodes in the spectral range below 1300 nm. The photodetector metrics are measured with respect to the applied voltage, incident light power, and temporal bandwidth, demonstrating operation at a video-frame rate of 50 Hz. In particular, the frequency and light dependence of the phototransistor characteristics are analyzed to understand the change in photoconductive gain under different working conditions.

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The hydrogen detection characteristics of semipolar (112¯2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112¯0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 °C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.

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