A cell model for non-volatile random access memory (RAM) is suggested in this study. An indicator, a cell, was introduced to simplify the explanation. If the indicator is good, then the device to which it belongs is acceptable. An inequality acquired through modeling a cell can determine whether a cell is good or not. To satisfy the pass condition, the energy barrier for storage (Eb), the sum of uniformities (uniformity of non-volatile material (Ui), uniformity related to the relative position of a data cell and a reference cell (Us)), and the sensing signal margin (Vsm) must be high. The inequality means that e EbUi e EbUs Vsm is larger than a constant. If the parameters of an indicator satisfy the inequality condition, the device will be acceptable. As any general property of the cell changes, the indicator's property will also change accordingly. As cell density increases, inequality will not be satisfied due to decreasing Ui. A new cell that can be predicted with the model is suggested. Increasing Eb for data storage and decreasing Eb for data transition seems to be necessary to increase the cell density of non-volatile RAM. Eb of non-volatile material is controlled by metallic lines in a new cell.
We have investigated the retention characteristics of ferroelectric random access memories (FeRAMs) using a bismuth layered perovskite, (Bi,La) 4 Ti 3 O 12 (BLT). Due to the charge retention loss in ferroelectric storage capacitors, the sensing signal margin in FeRAM devices decreases from 920 mV at the retention time of 0.01 s to 770 mV at 100 s. From the logarithmic time dependence of the loss of obtained cell signals, the average margin of 520 mV is expected to remain after 10 y at 90 • C. In addition, the slower retention loss rate in ferroelectric capacitors in long time retention region, suggests the high device reliability against retention degradation.
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