Abstract:A cell model for non-volatile random access memory (RAM) is suggested in this study. An indicator, a cell, was introduced to simplify the explanation. If the indicator is good, then the device to which it belongs is acceptable. An inequality acquired through modeling a cell can determine whether a cell is good or not. To satisfy the pass condition, the energy barrier for storage (Eb), the sum of uniformities (uniformity of non-volatile material (Ui), uniformity related to the relative position of a data cell a… Show more
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