We examine the problem of state transformations in the framework of Gaussian thermal resource theory in the presence of catalysts. To this end, we introduce an expedient parametrisation of covariance matrices in terms of principal mode temperatures and asymmetries, and consider both weak and strong catalytic scenarios. We show that strong catalysts (where final correlations with the system are forbidden) are useless for the single mode case, in that they do not expand the set of states reachable from a given initial state through Gaussian thermal operations. We then go on to prove that weak catalysts (where final correlations with the system are allowed) are instead capable of reaching more final system states, and determine exact conditions for state transformations of a single-mode in their presence. Next, we derive necessary conditions for Gaussian thermal state transformations holding for any number of modes, for strong catalysts and approximate transformations, and for weak catalysts with and without the addition of a thermal bath. We discuss the implications of these results for devices operating with Gaussian elements.
Outcome probability estimation via classical methods is an important task for validating quantum computing devices. Outcome probabilities of any quantum circuit can be estimated using Monte Carlo sampling, where the amount of negativity present in the circuit frame representation quantifies the overhead on the number of samples required to achieve a certain precision. In this paper, we propose two classical sub-routines: circuit gate merging and dynamic frame optimisation, which optimise the circuit representation to reduce the sampling overhead. We show that the runtimes of both sub-routines scale polynomially in circuit size and gate depth. Our methods are applicable to general circuits, regardless of generating gate sets, qudit dimensions and the chosen frame representations for the circuit components. We numerically demonstrate that our methods provide improved scaling in the negativity overhead for all tested cases of random circuits with Clifford+T and Haar-random gates, and that the performance of our methods compares favourably with prior quasiprobability samplers as the number of non-Clifford gates increases.
Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal ( T 1 ) and transverse ( T 2 ) relaxation times of phosphorus donors in bulk silicon with various electric field strengths up to near avalanche breakdown in high magnetic fields of about 1.2 T and low temperatures of about 8 K. We find that the T 1 relaxation time is significantly reduced under large electric fields due to electric current, and T 2 is affected as the T 1 process can dominate decoherence. Furthermore, we show that the magnetoresistance effect in silicon can be exploited as a means to combat the reduction in the coherence times. While qubit coherence times must be much longer than quantum gate times, electrically accelerated T 1 can be found useful when qubit state initialization relies on thermal equilibration.
Outcome probability estimation via classical methods is an important task for validating quantum computing devices. Outcome probabilities of any quantum circuit can be estimated using Monte Carlo sampling, where the amount of negativity present in the circuit frame representation quantifies the overhead on the number of samples required to achieve a certain precision. In this paper, we propose two classical sub-routines: circuit gate merging and frame optimisation, which optimise the circuit representation to reduce the sampling overhead. We show that the runtimes of both sub-routines scale polynomially in circuit size and gate depth. Our methods are applicable to general circuits, regardless of generating gate sets, qudit dimensions and the chosen frame representations for the circuit components. We numerically demonstrate that our methods provide improved scaling in the negativity overhead for all tested cases of random circuits with Clifford+T and Haar-random gates, and that the performance of our methods compares favourably with prior quasi-probability simulators as the number of non-Clifford gates increases.
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