2019
DOI: 10.1038/s41598-019-39613-4
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Electron spin relaxations of phosphorus donors in bulk silicon under large electric field

Abstract: Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long coherence times in any realistic experimental conditions. Here, we present pulsed electron spin resonance studies on the longitudinal ( T 1 ) and transverse ( T 2 ) relaxation times of phosphorus donors in bulk… Show more

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Cited by 2 publications
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“…Electric field noise can also be a major source of decoherence via modulation of certain spin parameters (see section Spin control) [85][86][87] . Large electrical noise is rarely present in bulk materials and appears instead in nanoscale devices with metallic or highly doped regions, or near surfaces with dangling bonds 88 .…”
Section: Spin Coherencementioning
confidence: 99%
“…Electric field noise can also be a major source of decoherence via modulation of certain spin parameters (see section Spin control) [85][86][87] . Large electrical noise is rarely present in bulk materials and appears instead in nanoscale devices with metallic or highly doped regions, or near surfaces with dangling bonds 88 .…”
Section: Spin Coherencementioning
confidence: 99%