The characteristics of emissive probes in unmagnetized high pressure ͑р1 Torr͒ argon and helium plasmas, produced by inductively coupled 13.56 MHz rf power, are studied. A procedure is given for interpreting emissive probe current-voltage ͑I -V͒ characteristics. The I -V curves indicate the amplitude of the rf fluctuation of the plasma potential. They also show ionization near the emissive probe when the potential drop between the emissive probe and the plasma potential is more than the ionization potential. Experiments show that when the temperature of the emissive probe wire and/or the neutral pressure is increased, ionization becomes significant. An increase in the local ion density due to the additional ionization was demonstrated by the I -V curves of an emissive probe and a nearby Langmuir probe. A simple procedure is presented for interpreting these results.
An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon viaPbamphoteric centers associated with surface dangling bonds. The proposed model is a surface adaptation of a model developed for bulk recombination in amorphous silicon based on Sah-Shockley statistics which is more appropriate for amphoteric center recombination than classical Shockley-Read-Hall statistics. It is found that the surface recombination via amphoteric centers having capture cross-sections larger for charged centers than for neutral centers is distinguished from Shockley-Read-Hall recombination by exhibiting two peaks rather than one peak when plotted versus surface potential. Expressions are derived for the surface potentials at which the peaks occur. Such a finding provides a firm and plausible interpretation for the double peak surface recombination current measured in gated diodes or gated transistors. Successful fitting is possible between the results of the model and reported experimental curves showing two peaks for surface recombination velocity versus surface potential. On the other hand, if charged and neutral center capture cross-sections are equal or close to equal, surface recombination via amphoteric centers follows the same trend as Shockley-Read-Hall recombination and both models lead to comparable surface recombination velocities.
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