High-efficiency and polarization-independent focused vortex beam generators and detectors are realized and demonstrated with all dielectric metasurfaces in near-infrared regime.

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Graphene has been proposed as a material for semiconductor electronic and optoelectronic devices. Understanding the charge transport mechanisms of graphene/semiconductor Schottky barriers will be crucial for future applications. Here, we report a theoretical model to describe the transport mechanisms at the interface of graphene and semiconductors based on conventional semiconductor Schottky theory and a floating Fermi level of graphene. The contact barrier heights can be estimated through this model and be close to the values obtained from the experiments, which are lower than those of the metal/semiconductor contacts. A detailed analysis reveals that the barrier heights are as the function of the interface separations and dielectric constants, and are influenced by the interfacial states of semiconductors. Our calculations show how this behavior of lowering barrier heights arises from the Fermi level shift of graphene induced by the charge transfer owing to the unique linear electronic structure.

We investigate a classic analog of electromagnetically induced transparency (EIT) in a metal-dielectric-metal (MDM) bus waveguide coupled to two stub resonators. A uniform theoretical model, for both direct and indirect couplings between the two stubs, is established to study spectral features in the plasmonic stub waveguide, and the theoretical results agree well with the finite difference time domain simulations. Adjusting phase difference and coupling strength of the interaction, one can realize the EIT-like phenomena and achieve the required slow light effect. The theoretical results may provide a guideline for the control of light in highly integrated optical circuits.

Tunable and high-sensitivity sensing based on Fano resonance is analytically and numerically investigated in coupled plasmonic cavities structure. To analyze and manipulate the Fano line shape, the coupled cavities are taken as a composite cavity that supports at least two resonance modes. A theoretical model is newly-established, and its results agree well with the finite difference time domain (FDTD) simulations for the plasmonic stub-pair structure. The detection sensitivity factor in coupled cavities approaches 6.541 × 107 m−1, which is an order of magnitude larger than single stub case. In addition, the wavelengths of resonant modes in the plasmonic stub-pair structure can be adjusted independently, which paves a new way for improving detection sensitivity. These discoveries hold potential applications for realizing tunable and highly integrated photonic devices.

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Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.