Abstract-Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shortchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computeraided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ~446´ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.
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