Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe2/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from −1.76 × 104 to 5.48 × 104 A/W. Moreover, the photodetector possesses broadband photodetection (365–965 nm), an ultrahigh specific detectivity (D*) of 5.8 × 1013 Jones, an external quantum efficiency of 1.86 × 107%, and a rapid response time of 20.8 ms. The WSe2/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.

based on a sole 2D material to have the above two capabilities at the same time. Thus, a crucial issue for the next-generation 2D-material-based photodetectors is to explore a suitable strategy to achieve both high sensitivity and broad-spectrum response.Van der Waals (vdW) heterostructure created by stacking different 2D materials with highly distinct electronic states have shown interesting electronic and optical properties. [7,8] Nowadays, employing vdW heterostructure based on photogating effect demonstrates significant promise for revealing many intriguing physical phenomena and designing optoelectronic devices with superior performance. [8][9][10][11][12][13][14] Rhenium disulfide (ReS 2 ), as a member of the TMDs, has been widely researched due to its high light absorption capability, structural flexibility, and direct bandgap independent of thickness. [15] The photodetectors prepared by a few layers of ReS 2 have shown an ultrahigh responsivity of 88 600 A W −1 , indicating that ReS 2 could serve as a prospective material for future optoelectronic applications. [16] Indium selenide (InSe) has recently been found to display a wide bandgap window ranging from ≈1.25 eV in bulk to ≈2.2 eV in the monolayer. [17][18][19] High carrier mobility (≈10 3 cm 2 V −1 s −1 ) allows for extremely fast response of photodetectors based on InSe and its heterojunctions. [18,20] Thus, it is possible to enhance the overall performance of the photodetector by combining the advantages of InSe and ReS 2 .In this work, a high-performance photodetector based on InSe/ReS 2 vertical heterojunction is fabricated, in which ReS 2 acts as the transport layer, and the top layer InSe serves as the photogate to regulate the channel current. Benefiting from the vertical structure and excellent interface quality, the photodetector demonstrates excellent photodetection ability. On the one hand, the detectivity of the photodetector shows an ultrahigh value of over 10 13 Jones and even over 10 14 Jones at higher drain voltage, which is much higher than other reported photodetectors based on 2D materials. [10,[20][21][22][23][24][25] The photodetector exhibits a high responsivity of 1921 A W −1 , an ultrahigh external quantum efficiency (EQE) of 6.53 × 10 5 %, and a fast response time of 21.6 ms. On the other hand, the photoresponse of photodetectors ranges from the ultraviolet (365 nm) to the near-infrared (965 nm). The ultrahigh sensitivity, broad-spectrum response, and high-efficiency of the photodetector suggest that the InSe/ ReS 2 vertical heterostructure is promising for fast and ultrasensitive broad-spectrum photodetectors. Photogating effect based on vertical structure of 2D materials allows for the realization of a highly sensitive photodetector. A highly sensitive and broadspectrum (365-965 nm) photodetector is reported based on the indium selenide (InSe)/rhenium disulfide (ReS 2 ) vertical heterostructure, where the top layer InSe serves as the photogate to regulate the channel current, enabling a large photoconductive gain of 10 6 . ...

Advanced Ni//Zn batteries possess great promise that combines battery‐level energy density and capacitor‐level power density. However, the surface chemical reactivity of the cathode is generally restricted by active material utilization, leading to an insensitive edge site and unsatisfactory capacity. Herein, a simple and energy‐saving strategy is reported for manipulating the bimetallic sulfide nanointerfaces via water invoking interface corrosion to achieve a 200% increase in the capacity of electrodes. The combined action of water and oxygen causes secondary in situ growth of NiCo–OH nanosheet coating layers on the CoxNi3‐xS2 nanowalls with surface enrichment of low‐valence mixed states, which deliver remarkable reactive activity and structural stability. As a result, the 3D cathode yields an ultrahigh capacity of 2.45 mAh cm−2, higher than that of the pristine nanomaterial (1.20 mAh cm−2). The resulting Ni//Zn battery with excellent reversibility and long‐life, achieves a remarkable energy density of 4.29 mWh cm−2 (728 Wh kg−1), which is superior to most recently reported aqueous Zn‐based batteries and is even comparable to Li‐ion batteries. This work explores the interface corrosion mechanism and corrosion‐surface activity relationship, which is a powerful strategy to construct high surface electrochemical activity of metallic sulfides/phosphides for renewable energy storage devices.

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The reasonable design of electrode materials with heterojunction and vacancy is a promising strategy to elevate its electrochemical performances. Herein, tin-based sulfide composites with heterojunction and sulfur vacancy encapsulated by...

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As a class of highly stable materials, the application of high dielectric constant materials in the field of energy is hampered by the low electrical conductivity and poor energy storage...

Spin-torque diodes (STDs) offer the possibility of using spin torque to generate rectification voltage with promising applications in microwave detecting, energy harvesting, and neuromorphic computing. Here, we demonstrate a highly sensitive STD with ultralow current density based on a magnetic tunnel junction with perpendicular magnetic anisotropy. At zero magnetic field, a high sensitivity exceeding 3785 V/W is obtained with a low current of −20 μA, corresponding to a current density of ∼105 A/cm2, which is one order lower than the previously reported. When a weak external magnetic field is applied, the sensitivity can be further increased by five times to 20 000 V/W. Furthermore, we construct an artificial neural network with STD neurons to perform recognition of handwritten digits in the Mixed National Institute of Standards and Technology database, where a produced accuracy of up to 94.92% is obtained. Our work provides a route to develop low-power consumption high-sensitivity STDs for Internet of Things applications and neuromorphic computing.