Under different nanomagnets' size, switching behaviour of all spin logic (ASL) devices constructed with Co and permalloy (Py) nanomagnets are studied by using the coupled spin-transport/magneto-dynamics model. The results indicate that ASL devices' switching delay and energy dissipation can be reduced by decreasing the thickness of nanomagnets. The switching delay and energy dissipation of PyASL are lower than those of CoASL in a smaller thickness of nanomagnet, but they increase much faster than those of CoASL when the nanomagnets (FM) thickness increases. With the dimensional scaling of nanomagnets, the ASL devices' switching delay and energy dissipation decrease rapidly and the influence of thermal noise become weak. Moreover, under the same nanomagnet volume, ASL devices' switching delay, energy dissipation, and energy barrier can be reduced by decreasing aspect ratio. These findings can provide guidelines for optimising the ASL devices' materials and size.
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Quantum-dot cellular automata (QCA), a promising candidate nanotechnology for the next generation computers, has attracted the interest of researchers all over the world since 1993. The divider is a major component of arithmetic logic unit, which has a remarkable impact on the performance of the central processing unit. The widely used algorithm in the divider is the non-restoring division, but there is no work which has reported the implementation of non-restoring dividers based on QCA. Presented is the design of a non-restoring binary array divider in QCA and its validity is verified using QCADesigner software. The proposed non-restoring divider has the advantage of time-saving and is easy to control when compared with the existing restoring dividers.
All spin logic device (ASLD) is a potential beyond-CMOS option for future digital logic application. However, magnetic reversal only using spin transfer torque (STT) in initial device structure degrades its performance. In this paper, we propose a magneto-electric (ME) effect assisted ASLD (ME-ASLD), which significantly shortens the device's switching delay and improves energy efficiency. A magnetization-dynamics/spin-transport hybrid model has been developed for analyzing the operation and performance of the ME-ASLD. The simulation results show that the ME switching delay remains unchanged and the ME energy dissipation decreases linearly with the decreasing of ME layer thickness under the condition of fixed ratio of voltage to thickness, and the magnetization rotation driven by ME effect is more effective than by STT effect. Most importantly, compared with ASLD, the proposed ME-ASLD achieves about 15.3× shorter switching delay and 12.6× lower energy dissipation. Moreover, the ME-ASLD prefers to operate at lower voltage which leads to lower energy-delay product and ultra-low energy dissipation.
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