We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.
Camellia oil one of the most important vegetable oils in China. Fatty acid composition and positional distribution analyzed by GC and GC‐MS in this study reveals that camellia oil is rich in oleic acid (around 78% in TAG and 85% at sn‐2 position of TAG). Camellia oil has a potential as an edible oil which provides oleic acid or for use as a feedstock in designing oleic acid‐enriched structured lipids.
Camellia oil – a high oleic‐vegetable oil.
A new rf plasma nitrogen source has been characterized for growth of GaN on basal-plane sapphire by molecular beam epitaxy. For rf power of 500 W and N2 flow rate of 2 sccm, a maximum GaN growth rate of 0.80 μm/hr is obtained, implying a source efficiency greater than 5%. It is found that the GaN surface roughness is extremely sensitive to V:Il ratio near unity and independent of growth rate in the range 0.3-0.8 μm/hr. Roughness as small as 1.0 nm (rms) is measured by atomic-force microscopy. Microstructure of the high-growth-rate films is similar to other GaN films, as observed in cross-section transmission electron microscope images. The electroluminescence spectra from homojunction light-emitting diodes exhibit a band of nearultraviolet emissions corresponding to the energy separation of the intentional donor and acceptor levels on the two sides of the junction. The intensity of these emissions relative to the visible spectrum increases with drive current density, implying saturation of deep trap levels responsible for the visible light output.
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