The organic low-k hybrid-organic-siloxane-polymer ͑HOSP ® ͒ has been investigated as an intermetal dielectric. The presence of Si-H and Si-CH 3 bonds instead of partial Si-O bonds lowers the dielectric constant compared to conventional siloxane-based spin-on glass. However, dielectric degradation occurs due to the destruction of functional groups in HOSP during the photoresist ashing process. In this work, we have applied NH 3 plasma nitridation to improve the quality of HOSP films. The NH 3 plasma process converts the organic HOSP surface into an inorganic surface by formation of a thin inert SiN x passivation layer. The inert layer can enhance the resistance of the HOSP film to moisture uptake and O 2 plasma attack during photoresist stripping. In addition, it effectively prevents copper from penetrating the HOSP film.
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