Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer

Liu, Po–Tsun; Chang, Ting‐Chang; Su, Hsing; Mor, Y. S.; Yang, Ya‐Liang; Chung, Henry H.; Hou, Jan; Sze, S. M.

doi:10.1149/1.1342184

Cited by 43 publications

(38 citation statements)

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“…This class of hybrid organic/ inorganic materials is very promising due to its good material properties and similarity to SiO 2 . The polymer studied here has been described as a methyl-hydrogen silsesquioxane, 8,9 and has a k value of ϳ2.5. In this work, a correlation between the previously reported C-V shifts during BTS and the mobile ion peaks detected during TVS has been demonstrated.…”

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confidence: 99%

Mobile Ion Detection in Organosiloxane Polymer Using Triangular Voltage Sweep

Mallikarjunan¹,

Murarka²,

2002

J. Electrochem. Soc.

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The triangular voltage sweep ͑TVS͒ technique has been traditionally used for mobile ion detection in gate oxides. In this paper, we present and discuss the results of TVS measurements on plasma enhanced chemical vapor deposited ͑PECVD͒ silicon oxide and a low dielectric constant hybrid organosiloxane polymer ͑HOSP͒. A variety of gate metals were studied to detect and separate mobile ion effects associated with the metal. For the PECVD oxide, no peak was detected with Al gate metal, whereas a large peak was detected with Cu; allowing us to correlate the observed peak to mobile copper ions. TVS traces revealed no peak for Pt/HOSP capacitors, but peaks were detected with Cu, Ta, and Al capacitors. Thus, the appearance of mobile ion peaks in the TVS traces correlated well with the previously published bias-temperature stressing ͑BTS͒ induced instability of these capacitors, where the flatband voltage shifts during BTS were in the order Pt Ͻ Cu Ͻ Ta Ͻ Al, with no shift observed for Pt capacitors. The effects of temperature, voltage sweep rate, and bias hold time were also investigated for Al/HOSP and Cu/HOSP capacitors. Cu peaks were one to two orders of magnitude smaller than Al peaks under all conditions investigated. It was concluded that the peaks originate from the gate metal.Low dielectric constant (low-k) materials are being explored as replacements for silicon dioxide for interconnect dielectric applications in high performance silicon integrated circuits e.g., microprocessors. The implementation of low-k materials, along with copper as the interconnect metal, is a widely recognized solution to lower interconnect delay ͑resistance-capacitance delay͒. 1 The candidate low-k materials can be grouped as inorganics, organics ͑polymers͒, organic silica-based materials, and porous versions of these three categories of materials. The low-k interconnect dielectrics between metal lines are subject to thermal and electrical stresses during processing ͑e.g., deposition, solvent drying, annealing, or sintering and etching͒ and under operating conditions. Intrinsic metal ion contamination or injection of metal ions under these conditions influences the dielectric's electrical properties. For example, increase in leakage current and premature breakdown of the dielectric could be induced by copper ion drift into the dielectric. 2 The study of metal atom/ion penetration into low-k material and its impact on the longterm reliability of the interconnect system is thus essential prior to the adoption of a given low-k material as an interlayer dielectric ͑ILD͒.Traditionally, the bias temperature stressing ͑BTS͒ technique has been valuable in detecting mobile ion drift into oxide dielectrics. The method consists of monitoring changes in the flatband voltage of capacitance-voltage ͑C-V͒ curves after high temperature biasing sequences. 3 Recently, the triangular voltage sweep ͑TVS͒ technique 4 is gaining popularity for detection of copper ions in interconnect dielectrics. 5 This method was developed by Kuhn and Silversmith 6 to study...

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confidence: 99%

Mobile Ion Detection in Organosiloxane Polymer Using Triangular Voltage Sweep

Mallikarjunan¹,

Murarka²,

2002

J. Electrochem. Soc.

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“…The contribution of the highly polarized Si-OH components will increase the k value of the films. Furthermore, the orientation polarization Si-OH bonds in the MSQ films lead to moisture uptake, which is responsible for the increase of k value and leakage current density [14]. On the other hand, part of these dangling bonds form Si-O bonds.…”

Section: Methodsmentioning

confidence: 99%

Repairing oxygen plasma-damaged on low dielectric constant MSQ (methylsilsesquioxane) films with anneal

2012

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Low dielectric MSQ (methylsilsesquioxane) films are obtained by spin-coating deposition on the p-Si (100) wafer. MSQ could be synthesized by one-step processing. Fourier transform infrared spectrometer (FTIR) was used to identify the network structure and cage structure of Si-O-Si bonds. C-V characteristic was used to calculate the dielectric constant. I-V characteristic was used to determine the leakage current density and the breakdown electric field. The results indicate that oxygen plasma exposure damaged the MSQ films by removing the carbon content on the surface of the films. Oxygen plasma exposure on MSQ films form the Si-OH bonds which induce to the increase of the hydrophilicity. The increase of the hydrophilicity on the surface of MSQ films increases the dielectric constant and leakage current density of MSQ films. Both the dielectric constants and leakage current density of MSQ films decreased with anneal at 350°C for 1.5 h in nitrogen ambient.

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“…Many studies show that the dielectric constant of low-k materials can be increased to as high as 7-8 after oxygen plasma treatment. However, these investigations were all performed on a blanket film [5][6][7]. As a result, it is difficult to determine the damage of dielectrics in the metal array of a patterned wafer.…”

Section: Introductionmentioning

confidence: 99%