3D stacked ReRAM is difficult to realize because of the difficulties in bipolar selecting device and the lack of suitable architecture to decode the 2-terminal device for 3D array. In this study, we report a novel self-rectifying WSi x O y ReRAM with good high temperature data retention and read disturb immunity. Rapid thermal oxidation (RTO) of WSi x forms the WSi x O y layer as both the storage node and a rectifying device with the p+ poly electrode. The simple process to achieve this self-rectifying device allows us to incorporate it into a double-density 3D architecture that adopts a regular MOSFET for X-Y decoding. We estimate this device and architecture that can easily provide operation margins for up to 16 layers of 3D ReRAM.
Protection layers on double ex situ lift-out TEM specimens were investigate in this paper and two protection layer approaches for double INLO or double EXLO were introduced. The improved protection methods greatly decreased the damage layer on the top surface from 90 nm to 5 nm (or lower) during FIB milling. According to the property of different sample and its preliminary treatment in the FIB, we have the satisfactory approaches to be applied. Using this improved protection method, we demonstrate the structures within the TEM lamella can be observed without ion beam damage/implantation during FIB
The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.
A recently developed technique known as Electron Beam Induced Resistance Change (EBIRCH) equipped with a scanning electron microscope (SEM) utilizes a constant electron beam (e-beam) voltage across or current through the defect of interest and amplifies its resistance variation. In this study, EBIRCH is applied for a 3D NAND structure device fault isolation but suffered from nearby dielectric film deformation. The characterization of such dielectric deformation and the possible mechanisms of e-beam induced damage are discussed. As well, a threshold condition to avoid from triggering the occurrence of dielectric damage is presented for shallow defect analysis in EBIRCH application.
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