This paper deals with the prediction of primary parameters of CMOS transistor for upcoming process using the robust Bisquare Weights method which is able to provide solutions to the challenges of some parameters of Nanoscale CMOS. Predicted parameters for 45 nm to 22 nm process nodes are obtained in order to solve design challenges generated by Nanoscale process. These predicted primary parameters are helpful to estimate the performance of a basic element circuit having a key role in the design of upcoming analog systems. Comparisons between predictive technology model data and predicted parameters are used to check the validity of the used method. As a study case, we will detail the behavior of optimized telescopic operational transconductance amplifier performance with process scaling.
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