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An ultra‐wideband (UWB) low noise amplifier (LNA) that consists of two common‐source and shunt‐feedback stages is presented. Measurement results show the maximum gain (S21) of 13.5 dB with the 3‐dB band from 1.85 to 10.2 GHz and return losses (S11, S22) of less than −10 dB from 3 to 11 GHz. In addition, the fabricated LNA achieves the average noise figure (NF) of 4.5 dB from 1.85 to 10.2 GHz. To our knowledge, these are the best measured data up to date for the CMOS LNA. The input‐referred third‐order intercept point (IIP3) and the input‐referred 1‐dB compression point (P1dB) are obtained as −1 dBm and −9 dBm, respectively, while consuming 13 mW in 0.18 μm RF CMOS process. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 749–752, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22282

This paper represents a high performance wideband CMOS direct down-conversion mixer for UWB based on 0.18 µm CMOS technology. The proposed mixer uses the current bleeding technique and an extra resonant inductor to improve the conversion gain, noise figure (NF) and linearity. Also, with an extra inductor and the careful choosing of transistor sizes, the mixer has a very low flicker noise. The shunt resistor matching is applied to have a 528MHz bandwidth matching at 50 Ohm. The simulation results show the voltage conversion gain of 20.5 dB, the double-side band NF of 5.6 dB. Two-tone test result indicates 11.25 dBm of IIP3 and higher than 70 dBm of IIP2. The circuit operates at the supply voltage of 1.8 V, and dissipates 11.5 mW.

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