An ultra-wideband CMOS low noise amplifier for 3-5-GHz UWB system

Kim, Chang-Wan; Kang, Min-Suk; Anh, Phan Tuan; Kim, Hoontae; Lee, Sang‐Gug

doi:10.1109/jssc.2004.840951

Cited by 363 publications

(18 citation statements)

References 5 publications

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“…The CMOS multiplexer shown in Figure 2 consists of eight channels, where each consists of a low-noise preamplifier (LNA), a frequency mixer, and a band-pass filter (BPF). The MR signals are amplified and then shifted to eight different frequency bands centered at 10,15,20,25,30,35,40, and 45 MHz, respectively, and each is then individually band-pass filtered. After this stage, the filtered MR signals are added using a high-speed operational amplifier, to be transmitted on the same coaxial cable.…”

Section: Eight-channel Frequency Multiplexermentioning

confidence: 99%

“…Various topologies are used to realize LNAs in CMOS technology. Some topologies use resistive feedback, such as those reported in [14][15][16], while other topologies use an inductive source degeneration common-source (CS) LNA with an inductor-capacitor (LC)-BPF connected to the gate in order to achieve wideband matching [15,17]. The disadvantage of the former topologies is their considerable power consumption, while the disadvantage of the latter topologies is the use of a large number of bulky inductors.…”

Section: Circuit Designmentioning

confidence: 99%

“…This op-amp-based topology was preferred to the Gm-C topology, mainly because of its higher linearity and input dynamic range, while the single-ended operation was chosen in order to save area and power. In Figure 6, if A(s) is the open-loop transfer function of the operational amplifier, then the transfer function, H(s), of the circuit in Figure 6 can be calculated by applying straightforward circuit theory as shown in Equation (15).…”

Section: The Band-pass Filtermentioning

confidence: 99%

See 2 more Smart Citations

Implementation of an in‐field CMOS frequency division multiplexer for 9.4 T magnetic resonance applications

Jouda

Gruschke

Korvink

2014

Circuit Theory & Apps

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Summary This paper introduces the implementation of an application‐specific complementary metal oxide semiconductor frequency division multiplexer as a novel solution to interface magnetic resonance (MR) phased arrays of micro‐detectors to an image‐processing unit, thus reducing the complexity and space issues associated with MR detector arrays. The frequency multiplexer, in a compact 3 × 4 mm silicon die, is designed to operate at 400 MHz, which is the Larmor frequency of 1H protons in a 9.4‐T MR imaging system. The system implements eight channels, where each channel consists of a low‐noise amplifier, a frequency mixer, and a band‐pass filter. The maximum gain of an individual channel after the band‐pass filter stage is 38 dB. The suppression of the local oscillator ranges from 40 to −51 dB, and the maximum coupling between channels is −39 dB. The input dynamic range of an individual channel is 8 mV. Each channel consumes 54 mA from a 3.3‐V source. The chip operates without errors within a high 9.4‐T magnetic field. Copyright © 2014 John Wiley & Sons, Ltd.

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Section: Eight-channel Frequency Multiplexermentioning

confidence: 99%

Section: Circuit Designmentioning

confidence: 99%

Section: The Band-pass Filtermentioning

confidence: 99%

See 1 more Smart Citation

Implementation of an in‐field CMOS frequency division multiplexer for 9.4 T magnetic resonance applications

Jouda

Gruschke

Korvink

2014

Circuit Theory & Apps

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“…As a result, the real part value degradation is not as severe compared to (2). As a disadvantage, the parasitic capacitors C p1 and C p2 are not typically modelled in design kit and therefore careful capacitance extraction from the layout is required.…”

Section: First Lnas (Lna1)mentioning

confidence: 99%

A dual-band direct-conversion RF front-end for WiMedia UWB receiver

Kaukovuori¹,

Ryynänen²,

Kaltiokallio³

et al. 2008

Analog Integr Circ Sig Process

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This paper describes a direct-conversion RF front-end designed for a dual-band WiMedia UWB receiver. The front-end operates in band group BG1 and BG3 frequencies. It includes multi-stage LNAs, down-conversion mixers, a polyphase filter for quadrature local oscillator (LO) signal generation, and LO buffers. The UWB receiver is targeted for a mobile handset, where several other radios can be simultaneously on. Therefore, special attention was paid on minimizing the interference from different wireless systems. The front-end achieves approximately 26-dB gain and 4.9-5.6-dB noise figure (NF) across three sub-bands of BG1. In BG3 mode it obtains 23-26-dB gain and 6.9-7.7-dB NF. The front-end consumes 48.1 and 42.7 mA from a 1.2-V supply voltage in BG1 and BG3 operation modes, respectively. The chip was implemented in a 0.13-lm CMOS.

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“…Another commonly used technique is the use of feedback amplifiers [5][6][7][8][9][10]. This solution offers a good return loss, but, due to the feedback, it is difficult to achieve a low noise figure with a reasonable power consumption.…”

Section: Introductionmentioning

confidence: 99%

A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

et al. 2020

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This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors’ knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain is increased, the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The proposed design achieves a tunable gain of 6.7–18 dB and a power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz and can find application in software design radios (SDRs), the low frequency medical implant communication system (MICS) or industrial, scientific, and medical (ISM) bands.

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An ultra-wideband CMOS low noise amplifier for 3-5-GHz UWB system

Cited by 363 publications

References 5 publications

Implementation of an in‐field CMOS frequency division multiplexer for 9.4 T magnetic resonance applications

Implementation of an in‐field CMOS frequency division multiplexer for 9.4 T magnetic resonance applications

A dual-band direct-conversion RF front-end for WiMedia UWB receiver

A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

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